bq4013Y

Features:

Data retention for at least 10 yearswithoutpower
Automatic write-protection during power-up/power-downcycles
Conventional SRAM operation,includingunlimitedwritecycles
Internal isolation of battery beforepowerapplication
Industry standard 32-pin DIP pinout


Pinout




Specifications

Symbol	Parameter	Value	Unit	Conditions
VCC	DC voltage applied on VCC relative to VSS	-0.3 to 7.0	V
VT	DC voltage applied on any pin excluding VCC relative to VSS	-0.3 to 7.0	V	VT VCC + 0.3
TOPR	Operatingtemperature	0 to +70	°C	Commercial
		-40 to +85		Extended "N"
TSTG	Storage temperature	-40 to +70	°C	Commercial
		-40 to +85	°C	Extended "N"
TBIAS	Temperature under bias	-10 to +70	°C	Commercial
		-40 to +85	°C	Extended "N"
TSOLDER	Soldering temperature	260	°C	For 10 seconds

Description

The CMOS bq4013/Y is a nonvolatile c1,048,576-bit static RAM organized as c131,072 words by 8 bits. The integral lcontrol circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cyclesofstandardSRAM.


The control circuitry constantly of bq4013Y monitors the single 5V supply for an out-of-tolerance condition. When V_CC falls out of tolerance, the SRAM is unconditionally write-protected to preventinadvertentwriteoperation.


At this time the integral energy source of bq4013Y is switched on to sustain the memory until afterV_CC returnsvalid.


The bq4013/Y uses an extremely low standby current CMOS SRAM,coupled with a small lithium coin cell to provide nonvolatility without long write-cycle times and the write-cycle limitations associated withEEPROM.


The bq4013/Y requires no external circuitry and is socket-compatible with industry-standard SRAMs and mostEPROMsandEEPROMs.