MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-92 D/C:08+
2N7000BU, 2N7000D26Z, 2N7000KL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-92
D/C: 08+
Description: MOSFET N-CHAN 60V 200MA TO-92
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PDF/DataSheet Download
Datasheet: 2N7000BU
File Size: 87279 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N7000
File Size: 238063 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N7000KL
File Size: 75016 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
| Technical/Catalog Information | 2N7000BU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 30pF @ 25V |
| Power - Max | 400mW |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-92 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N7000BU 2N7000BU |
| Symbol | Characteristic | Value | Units |
| VDSS | Drain-to-Source Voltage | 60 | V |
| ID | Continuous Drain Current (TC=25) | 200 | mA |
| Continuous Drain Current (TC=100) | 110 | ||
| IDM | Drain Current-Pulsed | 1000 | mW |
| VGS | Gate-to-Source Voltage | ±30 | mW/ |
| PD | Total Power Dissipation (TC=25) Linear Derating Factor |
400 3.2 | mA |
| TL,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 | VDSS V |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds | 300 |
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 60 |
V |
| Gate-Source Voltage |
VGS | 20 | |
| Continuous Drain Current (TJ = 150) TA = 25 |
ID | 0.47 |
A |
| Continuous Drain Current (TJ = 150) TA = 70 | IDM | 0.37 | |
| Pulsed Drain Current | IDM | 1.0 | |
| Power Dissipation | PD | 0.8 |
W |
| 0.51 | |||
| Maximum Junction-to-Ambient | RthJA | 156 | /W |
| Operating Junction and Storage Temperature Range | TJ, Tstg |
−55 to 150 |
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