2N7000-G

MOSFET 60V 5Ohm

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2N7000-G Picture
SeekIC No. : 00150510 Detail

2N7000-G: MOSFET 60V 5Ohm

floor Price/Ceiling Price

US $ .12~.16 / Piece | Get Latest Price
Part Number:
2N7000-G
Mfg:
Supertex
Supply Ability:
5000

Price Break

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  • 100~500
  • 500~1000
  • Unit Price
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  • Processing time
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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 200 mA
Resistance Drain-Source RDS (on) : 5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 200 mA
Package / Case : TO-92
Resistance Drain-Source RDS (on) : 5 Ohms


Features:

·Free from secondary breakdown
·Low power drive requirement
·Ease of paralleling
·Low CISS and fast switching speeds
·Excellent thermal stability
·Integral Source-Drain diode
·High input impedance and high gain
·Complementary N- and P-Channel devices



Application

·Motor controls
·Converters
·Amplifi ers
·Switches
·Power supply circuits
·Drivers (relays, hammers, solenoids, lamps,
·memories, displays, bipolar transistors, etc.)



Pinout

  Connection Diagram


Specifications

Parameter Value
Drain to source voltage BVDSS
Drain to gate voltage BVDGS
Gate to source voltage ±30V
Operating and storage temperature -55 to +150
Soldering temperature1 +300

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

Notes:
1. Distance of 1.6mm from case for 10 seconds.




Description

The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, 2N7000 is free from thermal runaway and thermally-induced secondary breakdown.

Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.




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