MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:Vishay Siliconix D/C:N/A
2N7001, 2N7001-T1, 2N7002 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: Vishay Siliconix
D/C: N/A
Description: MOSFET N-CH 60V 200MA SOT-23-3
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PDF/DataSheet Download
Datasheet: 2N7000
File Size: 238063 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N7000
File Size: 238063 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N7002
File Size: 249488 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | 2N7002 |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 43pF @ 25V |
| Power - Max | 350mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 2nC @ 5V |
| Package / Case | SOT-23-3 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N7002 2N7002 497 3111 1 ND 49731111ND 497-3111-1 |
The 2N7002 is a kind of DMOS N-channel transistor.It is available in SOT-23 plastic package.
The following is its features.(1) high input impedance; (2) high-speed switching; (3) no minority carrier storage time; (4) CMOS logic compatible input; (5) no minority carrier storage time; (6) CMOS logic compatible input; (7) no thermal runaway; (8) no secondary breakdown.
Then is about the absolute maximum ratings at TA is 25.(1): drain-source voltage(VDSS) is 60 V; (2): drain-gate voltage(VDGS) is 60 V; (3): pulsed gate-source-voltage(VGS) is ±20 V; (4): continuous drain current(ID) is 250 mA; (5): power dissipation at TC is 50(Ptot) is 0.310 W; (6): junction temperature(Tj) is 150; (7): storage temperature(Ts) ranges from -55 to 150; (8): continuous maximum forward current(IF) is 0.3 A; (9): typical forward drop(VF) is 0.85 V; (10): drain cutoff current is 0.5A at VDS is 25 V, VGS is 0; (11): input capacitance is 60 pF at VDS is 10 V, VGS is 0,f is 1 MHz; (12): typical gate threshold voltage is 2 V at VGS is VDS,ID is 1 mA and the maximum is 2.5 V.
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