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2N7002F, 2N7002K, 2N7002K215

Table of contents:
Info of 2N7002F
Info of 2N7002K
Info of 2N7002K215

2N7002F, 2N7002K, 2N7002K215 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT23 D/C:08+

2N7002F, 2N7002K, 2N7002K215 Datasheet download

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Part Number: 2N7002F

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT23

D/C: 08+

Description: MOSFET N-CH 60V 115MA SOT23

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2N7002F General Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™¹ technology.

Product availability:2N7002F in SOT23.

2N7002F Features

TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.

2N7002F Typical Application

Relay driver
High speed line driver
Logic level translator.

2N7002F Connection Diagram

2N7002K Parameters

Technical/Catalog Information	2N7002K
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	115mA
Rds On (Max) @ Id, Vgs	2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	350mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-23
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N7002K 2N7002K 2N7002KTR ND 2N7002KTRND 2N7002KTR

2N7002K General Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.

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