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This is the description about 2N720A, 2N1893 and 2N1893Sof the NPN low power silicon transistor, qualified per MIL-PRF-19500/182. The absolute Maximum Ratings are these (TA = 25°C). Collector-Emitter Voltage is 80 Vdc. Collector-Base Voltage is 120 Vdc. Emitter-Base Voltage is 7.0 Vdc. Collector-Emitter Voltage (RBE = 10 ) is 100 Vdc. Collector Current is 500 mAdc. Total Power Dissipation @ TA = +25°C is 0.5W for 2N720A and is 0.8W for 2N1893 and 2N1893S; @ TC = +2°C) is 1.8W for 2N720A and is 3.0W for 2N1893 and 2N1893S. Operating Junction Temperature Range is from -65 to +200°C and Storage Junction Temperature Range is also from -65 to +200°C. These are the ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted). Collector-Emitter Breakdown Voltage (IC = 30 mAdc) is 80 Vdc. Collector-Emitter Breakdown Voltage (IC = 10 mAdc, RBE = 10 is 100 Vdc. Collector-Base Cutoff Current (VCB = 120 Vdc) is 10Adc and (VCB = 90 Vdc) is 10 Adc. Emitter-Base Cutoff Current (VEB = 7.0 Vdc) is 10Adc (VEB = 5.0 Vdc) is 10 Adc. Forward-Current Transfer Ratio (IC = 0.1 mAdc, VCE = 10 Vdc) is 20 and (IC = 10 mAdc, VCE = 10 Vdc) is 35 and (IC = 150 mAdc, VCE = 10 Vdc) is from 40 to 120. Collector-Emitter Saturation Voltage(IC = 150 mAdc, IB = 15 mAdc) is 5 Vdc. Base-Emitter Voltage (IC = 150 mAdc, IB = 15 mAdc) is 1.3 Vdc. At present there is not too much information about this model. If you are willing to find more about the 2N720A, 2N1893 and 2N1893S, please pay attention to our web! We will promptly update the relevant information. You can find it in www.ChinaICMart.com or www.seekic.com. Welcome to contact with us.