2N7372, 2N7373, 2N7374 Selling Leads, Datasheet
2N7372, 2N7373, 2N7374
- Table of contents:
Info of 2N7372
Info of 2N7373
Info of 2N7374
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About 2N7372
PDF/DataSheet Download
Datasheet: 2N7372
File Size: 57926 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
About 2N7373
PDF/DataSheet Download
Datasheet: 2N7373
File Size: 57926 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
About 2N7000
PDF/DataSheet Download
Datasheet: 2N7000
File Size: 238063 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
2N7372 General Description
These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. These devices have excellent unclamped and clamped reverse energy ratings with the base to emitter reversed biased.
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to permit operating temperature to 200. The hermetically sealed package insures maximum reliability and long life. The isolated low profile package allows for easy PC board fit.
2N7372 Maximum Ratings
| SYMBOL | CHARACTERISTIC | 2N7372 | 2N7373 | UNITS |
| VCBO VCEO VEBO |
Collector-Base Voltage Collector-Emitter VoltageEmitter-Base Voltage |
- 100 - 80 - 5.5 |
100 80 5.5 |
V V V |
| IC IC IB |
Continuous Collector Current Peak Collector Current Continuous Base Current |
5 10 2 |
5 10 2 |
A A A |
| TSTG TJ |
Storage Temperature Operating Junction Temperature Lead Temperature 1/16" from cast for 10 sec. Unclamped Inductive Load Energy |
-65 to 200 -65 to 200 300 15 |
mj | |
| PT | Continuous Device Dissipation TC = 25 TC = 100 |
58 33 |
58 33 |
W W |
| JC | Thermal Resistance Junction to Case | 3 | 3 | /W |
2N7372 Features
Planar Process for Reliability
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case
2N7372 Typical Application
Power Supply
Inverters and Converters
General Purpose Amplifiers
Inverters and Converters
General Purpose Amplifiers
2N7373 General Description
These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. These devices have excellent unclamped and clamped reverse energy ratings with the base to emitter reversed biased.
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to permit operating temperature to 200. The hermetically sealed package insures maximum reliability and long life. The isolated low profile package allows for easy PC board fit.
2N7373 Maximum Ratings
| SYMBOL | CHARACTERISTIC | 2N7372 | 2N7373 | UNITS |
| VCBO VCEO VEBO |
Collector-Base Voltage Collector-Emitter VoltageEmitter-Base Voltage |
- 100 - 80 - 5.5 |
100 80 5.5 |
V V V |
| IC IC IB |
Continuous Collector Current Peak Collector Current Continuous Base Current |
5 10 2 |
5 10 2 |
A A A |
| TSTG TJ |
Storage Temperature Operating Junction Temperature Lead Temperature 1/16" from cast for 10 sec. Unclamped Inductive Load Energy |
-65 to 200 -65 to 200 300 15 |
mj | |
| PT | Continuous Device Dissipation TC = 25 TC = 100 |
58 33 |
58 33 |
W W |
| JC | Thermal Resistance Junction to Case | 3 | 3 | /W |
2N7373 Features
Planar Process for Reliability
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case
2N7373 Typical Application
Power Supply
Inverters and Converters
General Purpose Amplifiers
Inverters and Converters
General Purpose Amplifiers
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