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AO9926B, AO9926E, AOB403

Table of contents:
Info of AO9926B
Info of AO9926E
Info of AOB403

AO9926B, AO9926E, AOB403 Selling Leads, Datasheet

MFG:Alpha & Omega Semiconductor Inc (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:09+

AO9926B, AO9926E, AOB403 Datasheet download

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Part Number: AO9926B

Category: Discrete Semiconductor Products

MFG: Alpha & Omega Semiconductor Inc (VA)

Package Cooled: SOP8

D/C: 09+

Description: MOSFET DUAL N-CH 20V 7.6A 8-SOIC

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AO9926B Parameters

Technical/Catalog Information	AO9926B
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7.6A
Rds On (Max) @ Id, Vgs	23 mOhm @ 7.6A, 10V
Input Capacitance (Ciss) @ Vds	630pF @ 10V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	8.8nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO9926B AO9926B 785 1100 6 ND 78511006ND 785-1100-6

AO9926B General Description

The AO9926B uses advanced trench technology to provide excellent R _DS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V _GS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product AO9926B is Pb-free (meets ROHS & Sony 259 specifications). AO9926BL is a Green Product ordering option. AO9926B and AO9926BL are electrically identical.

AO9926B Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	20	V
Gate-Source Voltage		V_GS	±12	V
Continuous Drain Current ^A	T_A=25°C	I_D	7.6	A
	T_A=100°C		6.1
Pulsed Drain Current ^B		I_DM	30
Power Dissipation ^A	TA=25°C	P_DSM	2	W
	TA=100°C		1.28
Junction and Storage Temperature Range		T_J,T_STG	-55 to 150	°C

AO9926B Features

V_DS (V) = 20V
I_D = 7.6 A (V_GS = 10V)
R_DS(ON) < 23m (V_GS= 10V)
R_DS(ON) < 26m (V_GS= 4.5V)
R_DS(ON) < 34m (V_GS= 2.5V)
R DS(ON) < 52m (V_GS = 1.8V)

AO9926B Connection Diagram

AO9926E General Description

The AO9926E uses advanced trench technology to provide excellent R_DS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWMapplications. It is ESD protected. Standard Product AO9926E is Pb-free (meets ROHS & Sony 259 specifications). AO9926EL is a Green Product ordering option. AO9926E and AO9926EL are

AO9926E Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	20	V
Gate-Source Voltage		V_GS	±8	V
Continuous Drain Current ^A	T_A=25°C	I_D	8	A
	T_A=70°C		6.4
Pulsed Drain Current ^B		I_DM	30
Power Dissipation ^A	T_A=25°C	P_D	2	W
	T_A=70°C		1.28
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	°C

AO9926E Features

`V_DS (V) = 20V
`I_D = 8A (V_GS = 4.5V)
`R_DS(ON) < 21m (V_GS = 4.5V)
`R_DS(ON) < 25m (V_GS = 2.5V)
`R_DS(ON) < 33m (V_GS = 1.8V)
`ESD Rating: 2000V HBM

AO9926E Connection Diagram

AOB403 General Description

The AOB403 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2-PAK package, this device is well suited for high current load applications. Standard product AOB403 is Pb-free (meets ROHS & Sony 259 specifications). AOB403L is a Green Product ordering option. AOB403 and AOB403L are electrically identical.

AOB403 Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage Gate-Source Voltage		V_DS V_GS	-60 ±20	V V
Continuous Drain Current ^B.G	T_C=25°C T_C=100°C	I_D	-30 -20	A
Pulsed Drain CurrentC		I_DM	-60	A
Avalanche Current^C Repetitive avalanche energy L=0.3mH^C		I_ARE_AR	-26 134	A mJ
Power Dissipation ^B	T_C=25°C T_C=100°C	P_D	42 83	W
Power Dissipation ^A	T_A=25°C T_A=70°C	P_DSM	2.2 1.45	W
Junction and Storage Temperature Range		T_J, T_STG	-55 to 175	°C

AOB403 Features

·V_DS (V) = -60V
·I_D = -30A (V_GS=-10V)
·R_DS(ON) < 44mΩ (V_GS = -10V ) @ 30A
·R_DS(ON) < 55mΩ (V_GS = -4.5V ) @ 20A

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