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AON3806, AON3810, AON3814

Table of contents:
Info of AON3806
Info of AON3810
Info of AON3814

AON3806, AON3810, AON3814 Selling Leads, Datasheet

MFG:Alpha & Omega Semiconductor Inc Category:Discrete Semiconductor Products Package Cooled:SOT D/C:07+PB

AON3806, AON3810, AON3814 Datasheet download

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Part Number: AON3806

Category: Discrete Semiconductor Products

MFG: Alpha & Omega Semiconductor Inc

Package Cooled: SOT

D/C: 07+PB

Description: MOSFET DUAL N-CH 20V 7A 8-DFN

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AON3806 Parameters

Technical/Catalog Information	AON3806
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.8A
Rds On (Max) @ Id, Vgs	26 mOhm @ 6.8A, 4.5V
Input Capacitance (Ciss) @ Vds	615pF @ 10V
Power - Max	1.9W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	8.5nC @ 4.5V
Package / Case	6-DFN
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AON3806 AON3806 785 1130 6 ND 78511306ND 785-1130-6

AON3806 General Description

The AON3806 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3806is Pbfree (meets ROHS & Sony 259 specifications). AON3806L is a Green Product ordering option. AON3806 and AON3806L are electrically identical.

AON3806 Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	20	V
Gate-Source Voltage		V_GS	±12	V
Continuous Drain Current ^A	T_A=25°C	I_D	7.3	A
	T_A=70°C		5.8
Pulsed Drain Current ^B		I_DM	30
Power Dissipation ^A	T_A=25°C	P_D	2.2	W
	T_A=70°C		1.4
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	°C

AON3806 Features

`V_DS (V) = 20V
`I_D = 7.3 A (V_GS = 10V)
`R_DS(ON)< 26m (V_GS = 4.5V)
`R_DS(ON) < 27m (V_GS = 4V)
`R_DS(ON) < 32m (V_GS = 2.5V)
`ESD Rating: 2500V HBM

AON3806 Connection Diagram

AON3810 Parameters

Technical/Catalog Information	AON3810
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	24 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	280pF @ 10V
Power - Max	2.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5.2nC @ 4.5V
Package / Case	6-DFN
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AON3810 AON3810 785 1131 2 ND 78511312ND 785-1131-2

AON3814 General Description

The AON3814 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V_GS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3814 is Pb-free (meets ROHS & Sony 259 specifications).

AON3814 Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	20	V
Gate-Source Voltage		V_GS	±12	V
Continuous Drain Current ^F	T_A=25°C	I_D	6	A
	T_A=70°C		5.3
Pulsed Drain Current ^B		I_DM	30
Power Dissipation ^F	T_A=25°C	P_D	2.4	W
	T_A=70°C		1.5
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	°C

AON3814 Features

`V_DS(V) = 20V
`I_D = 6A (V_GS = 4.5V)
`R_DS(ON) < 17m (V_GS = 4.5V)
`R_DS(ON) < 18.5m (V_GS = 4V)
`R_DS(ON) < 24m (V_GS = 2.5V)
`R_DS(ON) < 39m (V_GS = 1.8V)
`ESD Protected

AON3814 Connection Diagram

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