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AON4701L, AON4703, AON5802

Table of contents:
Info of AON4701L
Info of AON4703
Info of AON5802

AON4701L, AON4703, AON5802 Selling Leads, Datasheet

MFG:Alpha & Omega Semiconductor Inc Category:Discrete Semiconductor Products Package Cooled:ALPHA D/C:QFN

AON4701L, AON4703, AON5802 Datasheet download

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Part Number: AON4703

Category: Discrete Semiconductor Products

MFG: Alpha & Omega Semiconductor Inc

Package Cooled: ALPHA

D/C: QFN

Description: MOSFET P-CH -20V -3.4A 8-DFN

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AON4703 Parameters

Technical/Catalog Information	AON4703
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	90 mOhm @ 3.4A, 4.5V
Input Capacitance (Ciss) @ Vds	540pF @ 10V
Power - Max	1.7W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6.1nC @ 4.5V
Package / Case	8-DFN
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AON4703 AON4703 785 1133 2 ND 78511332ND 785-1133-2

AON4703 General Description

The AON4703 uses advanced trench technology to provide excellent R _DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4703 is Pb-free (meets ROHS & Sony 259 specifications). AON4703L is a Green Product ordering option. AON4703 and AON4703L are electrically identical.

AON4703 Maximum Ratings

Parameter		Symbol	MOSFET	Schottky	Units
Drain-Source Voltage		V_DS	-20		V
Gate-Source Voltage		V_GS	±8		V
Continuous Drain Current ^A	T_A=25°C	I_D	-3.4		A
Continuous Drain Current ^A	T_A=70°C	I_D	-2.7
Pulsed Drain Current ^B		I_DM	-15
		V_KA		20	V
Continuous Forward Current ^A	T_A=25°C	I_F		1.9	A
Continuous Forward Current ^A	T_A=70°C	I_F		1.2
Pulsed Forward Current ^B		I_FM		7
Power Dissipation	T_A=25°C	P_D	1.7	0.96	W
Power Dissipation	T_A=70°C	P_D	1.1	0.62	W
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	-55 to 150	°C

AON4703 Features

`V_DS (V) = -20V
`I_D = -3.4A (V_GS = -4.5V)
`R_DS(ON) < 90m (V_GS = -4.5V)
`R_DS(ON) < 120m (V_GS = -2.5V)
`R_DS(ON) < 160m (V_GS = -1.8V)
SCHOTTKY
`V_KA(V) = 20V, I_F = 1A, V_F<0.5V@0.5A

AON4703 Connection Diagram

AON5802 General Description

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is
ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON5802 is Pb-free (meets ROHS & Sony 259 specifications). AON5802L is a Green Product ordering option. AON5802 and AON5802L are electrically identical.

AON5802 Maximum Ratings

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±12	V
Continuous Drain Current. R_JA=75°C/W	T_A=25°C	I_D	8	A
	T_A=100°C		6
Pulsed Drain Current^C		I_DM	45
Power Dissipation ^AR_JA=75°C/W	T_A=25°C	P_DSM	1.7	W
	T_A=70°C		1.0
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	°C

AON5802 Features

V_DS (V) = 30V
I_D = 8 A (V_GS = 10V)
R_DS(ON) < 17 m (V_GS = 10V)
R_DS(ON) < 20 m (V_GS = 4.5V)
R_DS(ON) < 22 m (V_GS = 4.0V)
R_DS(ON) < 24 m (V_GS = 3.1V)
R_DS(ON) < 30 m (V_GS = 2.5V)
ESD Rating: 2000V HBM

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