AOT-TAWU-XXBCZ, AOU1N60, AOU400 Selling Leads, Datasheet
MFG:AOT Package Cooled:168000 D/C:2006
AOT-TAWU-XXBCZ, AOU1N60, AOU400 Datasheet download
Part Number: AOT-TAWU-XXBCZ
MFG: AOT
Package Cooled: 168000
D/C: 2006
AOT-TAWU-XXBCZ, AOU1N60, AOU400
- Table of contents:
Info of AOT-TAWU-XXBCZ
Info of AOU1N60
Info of AOU400
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About AOT400
PDF/DataSheet Download
Datasheet: AOT400
File Size: 471040 KB
Manufacturer: ALPHA
Download : Click here to Download
About AOU400
PDF/DataSheet Download
Datasheet: AOU400
File Size: 381494 KB
Manufacturer: ALPHA
Download : Click here to Download
About AOU400
PDF/DataSheet Download
Datasheet: AOU400
File Size: 381494 KB
Manufacturer: ALPHA
Download : Click here to Download
AOU1N60 General Description
The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
AOU1N60 Maximum Ratings
| Parameter |
Symbol |
Maximium |
Unit | |
| Drain to Source voltage |
VDS |
600 |
V | |
| Gate to Source voltage |
VGS |
±30 |
V | |
| Continuous Drain Current B |
TC=25 |
ID |
1.3 |
A |
| TC=100 |
0.8 | |||
| Pulsed Drain Current C |
IDM |
4.0 | ||
| Avalanche Current C |
IAR |
1.0 |
A | |
| Repetitive avalanche energy C |
EAR |
15 |
mJ | |
| Single pulsed avalanche energy G |
EAS |
30 |
mJ | |
| Peak diode recovery dv/dt |
dv/dt |
5 |
V/ns | |
| Power Dissipation B | TC=25 |
PD |
45 |
W |
| Derate above 25 |
0.36 |
W/ | ||
| Junction and Storage Temperature Range |
TJ, TSTG |
-50 to 150 |
||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL |
300 |
||
AOU1N60 Features
VDS (V) = 600V
ID = 1.3A
RDS(ON) < 9 (VGS = 10V)
100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!
ID = 1.3A
RDS(ON) < 9 (VGS = 10V)
100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!
AOU400 General Description
The AOU400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU400 is Pb-free (meets ROHS & Sony 259 specifications). AOU400L is a Green Product ordering option. AOU400 and AOU400L are electrically identical.
AOU400 Maximum Ratings
| Parameter | Symbol |
Maximum |
Units | ||
| Drain-Source Voltage | VDS |
60 |
V | ||
| Gate-Source Voltage | VGS |
±20 |
V | ||
| Continuous Drain Current G |
TC=25°C | ID |
38 |
A | |
| TC=100°C |
27 | ||||
| Pulsed Drain Current C | IDM |
60 | |||
| Avalanche Current C | IAR |
30 |
A | ||
| Repetitive avalanche energy L=0.1mH C | EAR |
140 |
mJ | ||
| Power Dissipation B | TC=25°C | PD |
60 |
W | |
| TC=100°C |
30 | ||||
| Junction and Storage Temperature Range | TJ, TSTG |
-55 to 175 |
°C | ||
AOU400 Features
`VDS (V) = 60V
`ID = 38 A (VGS = 10V)
`RDS(ON) < 25m (VGS = 4.5V)
`ID = 38 A (VGS = 10V)
`RDS(ON) < 25m (VGS = 4.5V)
AOU400 Connection Diagram
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