MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:03/04+
BSO119N03S, BSO130P03S, BSO150N03 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: SOP8
D/C: 03/04+
Description: MOSFET N-CHAN 30V 7.6A DSO-8
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PDF/DataSheet Download
Datasheet: BSO119N03S
File Size: 243216 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSO130P03S
File Size: 283202 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSO150N03
File Size: 230348 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | BSO119N03S |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 11.9 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 1730pF @ 15V |
| Power - Max | 1.56W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 13nC @ 5V |
| Package / Case | DSO-8 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSO119N03S BSO119N03S BSO119N03SINDKR ND BSO119N03SINDKRND BSO119N03SINDKR |
|
Parameter |
Symbol |
Conditions |
Values |
Unit | |
|
10 secs |
steady state | ||||
|
Continuous drain current |
ID |
TA=25 °C1) |
11 |
9.0 |
A |
|
TA=70 °C1) |
9.1 |
7.2 | |||
|
Pulsed drain current, one channel active |
I Dpulse |
TA=25 °C2) |
44 |
A | |
|
Avalanche energy, single pulse |
EAS |
I D=-9.1 A, RGS=25 |
58 |
mJ | |
|
Reverse diode dv/dt |
dv/dt |
ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C |
6 |
kV/s | |
|
Gate source voltage |
VGS |
±25 |
V | ||
|
Power dissipation |
Ptot |
TA=25 °C1) |
2.5 |
1.56 |
W |
|
Operating temperature |
T j , T stg |
-55 ... +150 |
°C | ||
|
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
°C | |||
| Technical/Catalog Information | BSO130P03S |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 9.2A |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 11.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 3520pF @ 25V |
| Power - Max | 1.56W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 81nC @ 10V |
| Package / Case | DSO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSO130P03S BSO130P03S |
|
Parameter |
Symbol |
Conditions |
Values |
Unit | |
|
10 secs |
steady state | ||||
|
Continuous drain current |
ID |
TA=25 °C1) |
-11.3 |
-9.2 |
A |
|
TA=70 °C1) |
-9.1 |
-7.4 | |||
|
Pulsed drain current, one channel active |
I Dpulse |
TA=25 °C2) |
-45 |
A | |
|
Avalanche energy, single pulse |
EAS |
I D=-9.1 A, RGS=25 |
148 |
mJ | |
|
Reverse diode dv/dt |
dv/dt |
ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C |
-6 |
kV/s | |
|
Gate source voltage |
VGS |
±25 |
V | ||
|
Power dissipation |
Ptot |
TA=25 °C1) |
2.36 |
1.56 |
W |
|
Operating temperature |
T j , T stg |
-55 ... +150 |
°C | ||
|
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
°C | |||
| Technical/Catalog Information | BSO150N03 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 7.6A |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 9.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 1890pF @ 15V |
| Power - Max | 1.4W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 15nC @ 5V |
| Package / Case | DSO-8 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSO150N03 BSO150N03 BSO150N03INDKR ND BSO150N03INDKRND BSO150N03INDKR |
|
Parameter |
Symbol |
Conditions |
Values |
Unit | |
|
10 secs |
steady state | ||||
|
Continuous drain current |
ID |
TA=25 °C1) |
9.1 |
7.6 |
A |
|
TA=70 °C1) |
7.3 |
6.1 | |||
|
Pulsed drain current, one channel active |
I Dpulse |
TA=25 °C2) |
36 |
A | |
|
Avalanche energy, single pulse |
EAS |
I D=-9.1 A, RGS=25 |
82 |
mJ | |
|
Reverse diode dv/dt |
dv/dt |
ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C |
6 |
kV/s | |
|
Gate source voltage |
VGS |
±25 |
V | ||
|
Power dissipation |
Ptot |
TA=25 °C1) |
2.0 |
1.4 |
W |
|
Operating temperature |
T j , T stg |
-55 ... +150 |
°C | ||
|
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
°C | |||
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