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ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C
6
kV/s
Gate source voltage
VGS
±25
V
Power dissipation
Ptot
TA=25 °C1)
2.5
1.56
W
Operating temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56
°C
BSO052N03S Features
• Fast switching MOSFET for SMPS • Optimized technology for
notebook DC/DC • Qualified according to JEDEC1 for
target applications • N-channel • Logic level • Excellent gate charge
x RDS(on) product (FOM) • Very low on-resistance RDS(on)
• Avalanche rated • dv /dt rated
BSO064N03S Parameters
Technical/Catalog Information
BSO064N03S
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
12A
Rds On (Max) @ Id, Vgs
6.4 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds
3620pF @ 15V
Power - Max
1.56W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
28nC @ 5V
Package / Case
DSO-8
FET Feature
Logic Level Gate
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
BSO064N03S BSO064N03S
BSO064N03S Maximum Ratings
Parameter
Symbol
Conditions
Values
Unit
10 secs
steady state
Continuous drain current
ID
TA=25 °C1)
16
12
A
TA=70 °C1)
12
9.9
Pulsed drain current, one channel active
I Dpulse
TA=25 °C2)
60
A
Avalanche energy, single pulse
EAS
I D=-9.1 A, RGS=25
170
mJ
Reverse diode dv/dt
dv/dt
ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C
6
kV/s
Gate source voltage
VGS
±25
V
Power dissipation
Ptot
TA=25 °C1)
2.5
1.56
W
Operating temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56
°C
BSO064N03S Features
• Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Avalanche rated • dv /dt rated
ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C
6
kV/s
Gate source voltage
VGS
±25
V
Power dissipation
Ptot
TA=25 °C1)
2.5
1.56
W
Operating temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56
°C
BSO072N03S Features
• Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Avalanche rated • dv /dt rated
