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BSO615N, BSO615NV, BSO742RI

Table of contents:
Info of BSO615N
Info of BSO615NV
Info of BSO742RI

BSO615N, BSO615NV, BSO742RI Selling Leads, Datasheet

MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:08.09+

BSO615N, BSO615NV, BSO742RI Datasheet download

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Part Number: BSO615NV

Category: Discrete Semiconductor Products

MFG: Infineon Technologies (VA)

Package Cooled: SOP8

D/C: 08.09+

Description: MOSFET DUAL N-CH 60V 3.1A 8-SOIC

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BSO615N Maximum Ratings

Parameter	Symbol	Values	Unit
Continuous drain current T_A = 25 °C T_A = 70 °C	L_D	2.6	A
Pulsed drain current, one channel active T_A= 25 °C	L_Dpulse	10.4	A
Avalanche energy, single pulse I_D = 3.1 A , V_DD = 25 V, R_GS= 25 I_D = -2 A , V_DD = -25 V, R_GS = 25	E_AS	60	mJ
Avalanche current,periodic limited by T_jmax	I_AR	2.6	A
Avalanche energy, periodic limited by T _jmax	E _AR	0.18	mJ
Reverse diode dv/dt I_S = 3.1 A, V_DS = 48 V, di/dt = 200 A/s, I_S = -2 A, V_DS = -48 T _jmax = 150 °C	dv/dt	6	kV/s
Gate source voltage	V_GS	±20	V
Power dissipation, one channel active T_A= 25 °C	P_tot	2	W
Operating temperature	T _j , T _stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56	°C

BSO615N Features

· Dual N Channel
· Enhancement mode
· Avalanche rated
· Logic Level
· dv/dt rated

BSO615NV Parameters

Technical/Catalog Information	BSO615NV
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	3.1A
Rds On (Max) @ Id, Vgs	120 mOhm @ 3.1A, 10V
Input Capacitance (Ciss) @ Vds	340pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	12nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO615NV BSO615NV BSO615NVINCT ND BSO615NVINCTND BSO615NVINCT

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