BUL57, BUL57FP, BUL57PI Selling Leads, Datasheet
MFG:ST Package Cooled:ST D/C:03+
BUL57, BUL57FP, BUL57PI
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Info of BUL57
Info of BUL57FP
Info of BUL57PI
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About BUL57
PDF/DataSheet Download
Datasheet: BUL57
File Size: 82630 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About BUL57FP
PDF/DataSheet Download
Datasheet: BUL57FP
File Size: 82630 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About BUL1101E
PDF/DataSheet Download
Datasheet: BUL1101E
File Size: 240354 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
BUL57 General Description
The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar edge termination to enhance switching speeds.
The devices are designed for use in lighting applications and low costs witch-mode power supplies.
They use a Cellular Emitter structure with planar edge termination to enhance switching speeds.
The devices are designed for use in lighting applications and low costs witch-mode power supplies.
BUL57 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VCES | Collector-Emitter Voltage (VBE= 0) | 700 | V |
| VCEO | Collector-Emitter Voltage (IB= 0) |
400 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 9 | V |
| IC | Collector Current | 8 | A |
| ICM | Collector Peak Current (tP<5 ms) | 16 | A |
| IB | Base Current | 4 | A |
| IBM | Base Peak Current (tP<5 ms) | 7 | A |
| Ptot | Total Dissipation at Tc = 25 | 85|35 | W |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
BUL57 Features
*STMicroelectronicsPREFERRED SALESTYPES
*NPNTRANSISTORS
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERIZEDAT125
*LARGERBSOA
*TO-220FPFULLYISOLATEDPACKAGE (U.L.COMPLIANT)
*NPNTRANSISTORS
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERIZEDAT125
*LARGERBSOA
*TO-220FPFULLYISOLATEDPACKAGE (U.L.COMPLIANT)
BUL57 Typical Application
*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING
*SWITCHMODEPOWERSUPPLIES
*SWITCHMODEPOWERSUPPLIES
BUL57FP General Description
The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar edge termination to enhance switching speeds.
The devices are designed for use in lighting applications and low costs witch-mode power supplies.
They use a Cellular Emitter structure with planar edge termination to enhance switching speeds.
The devices are designed for use in lighting applications and low costs witch-mode power supplies.
BUL57FP Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VCES | Collector-Emitter Voltage (VBE= 0) | 700 | V |
| VCEO | Collector-Emitter Voltage (IB= 0) |
400 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 9 | V |
| IC | Collector Current | 8 | A |
| ICM | Collector Peak Current (tP<5 ms) | 16 | A |
| IB | Base Current | 4 | A |
| IBM | Base Peak Current (tP<5 ms) | 7 | A |
| Ptot | Total Dissipation at Tc = 25 | 85|35 | W |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
BUL57FP Features
*STMicroelectronicsPREFERRED SALESTYPES
*NPNTRANSISTORS
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERIZEDAT125
*LARGERBSOA
*TO-220FPFULLYISOLATEDPACKAGE (U.L.COMPLIANT)
*NPNTRANSISTORS
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERIZEDAT125
*LARGERBSOA
*TO-220FPFULLYISOLATEDPACKAGE (U.L.COMPLIANT)
BUL57FP Typical Application
*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING
*SWITCHMODEPOWERSUPPLIES
*SWITCHMODEPOWERSUPPLIES
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