MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:05+
FDFS2P106A, FDFS2P106A-NL, FDFS2P753 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOP-8
D/C: 05+
Description: MOSFET/SCHOTTKY P-CH 60V 8SOIC
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PDF/DataSheet Download
Datasheet: FDFS2P106A
File Size: 93577 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDF5680
File Size: 451513 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDF5680
File Size: 451513 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDFS2P106A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 3A, 10V |
| Input Capacitance (Ciss) @ Vds | 714pF @ 30V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDFS2P106A FDFS2P106A FDFS2P106ATR ND FDFS2P106ATRND FDFS2P106ATR |
The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage |
60 ±20 3 10 2 1.6 1 0.9 55 to +150 45 1 |
V V A W °C V A | |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
|
PD |
Power Dissipation for Dual Operation Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
|
VRRM |
Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current |
(Note 1a) | ||
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