FDFMA2P853

MOSFET MLP 2X2 DUAL INTEGRATED PCH PO

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SeekIC No. : 00148653 Detail

FDFMA2P853: MOSFET MLP 2X2 DUAL INTEGRATED PCH PO

floor Price/Ceiling Price

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Part Number:
FDFMA2P853
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~250
  • Unit Price
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  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 120 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MicroFET-8 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 3 A
Package / Case : MicroFET-8
Resistance Drain-Source RDS (on) : 120 mOhms at 4.5 V


Features:

MOSFET:
 · -3.0 A, -20V. RDS(ON) = 120 mΩ @ VGS = -4.5 V
RDS(ON) = 160 mΩ @ VGS = -2.5 V
RDS(ON) = 240 mΩ @ VGS = -1.8 V
 · Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
Schottky:
 · VF < 0.46 V @ 500 mA



Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
VRRM

IO

PD
TJ, TSTG
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation for Single Operation
Power dissipation for Single Operation
Operating and Storage Junction Temperature Range


(Note 1a)

(Note 1a)
(Note 1a)
(Note 1b)

-20
±8
-2.2
-6
20
1
1.4
0.7
-55 to +150
V
V
A

V
A

W
oC



Description

This FDFMA2P853 device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

The FDFMA2P853 MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.




Parameters:

Technical/Catalog InformationFDFMA2P853
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs120 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds 435pF @ 10V
Power - Max700mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs6nC @ 4.5V
Package / CaseMicroFET-6
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFMA2P853
FDFMA2P853
FDFMA2P853CT ND
FDFMA2P853CTND
FDFMA2P853CT



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