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Part Number: FDFMA2P853

 

MFG: FSC

 

 

Description: This device is designed specifically as a single package solution for the battery charge switch in cel...


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FDFMA2P853 General Description


This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.

FDFMA2P853 Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
VRRM

IO

PD
TJ, TSTG
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation for Single Operation
Power dissipation for Single Operation
Operating and Storage Junction Temperature Range


(Note 1a)

(Note 1a)
(Note 1a)
(Note 1b)

-20
±8
-2.2
-6
20
1
1.4
0.7
-55 to +150
V
V
A

V
A

W
oC

FDFMA2P853 Features

MOSFET:
 · -3.0 A, -20V. RDS(ON) = 120 mΩ @ VGS = -4.5 V
RDS(ON) = 160 mΩ @ VGS = -2.5 V
RDS(ON) = 240 mΩ @ VGS = -1.8 V
 · Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
Schottky:
 · VF < 0.46 V @ 500 mA

FDFMA2P853 datasheet

FDFMA2P853
PDF/DataSheet Download

  • Datasheet: FDFMA2P853
  • File Size: 314460 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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