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FDG327NZ, FDG328P, FDG329N

Table of contents:
Info of FDG327NZ
Info of FDG328P
Info of FDG329N

FDG327NZ, FDG328P, FDG329N Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:SC70-6

FDG327NZ, FDG328P, FDG329N Datasheet download

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Part Number: FDG327NZ

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: SC70-6

Description: MOSFET N-CH 20V 1.5A SC70-6

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FDG327NZ Parameters

Technical/Catalog Information	FDG327NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	90 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	412pF @ 10V
Power - Max	380mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG327NZ FDG327NZ

FDG327NZ General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

FDG327NZ Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		20 ± 8 1.5 6 0.42 0.38 55 to +150	V A W °C
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
T_J, T_STG	Operating and Storage Junction Temperature Range

FDG327NZ Features

· 1.5 A, 20 V. R_DS(ON) = 90 mW @ VGS = 4.5 V. R_DS(ON) = 100 mW @ VGS = 2.5 V R_DS(ON) = 140 mW @ VGS = 1.8 V
· Fast switching speed
· Low gate charge
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability.

FDG327NZ Typical Application

· DC/DC converter
· Power management
· Load switch

FDG327NZ Connection Diagram

FDG328P Parameters

Technical/Catalog Information	FDG328P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	145 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	337pF @ 10V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG328P FDG328P

FDG328P General Description

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V 12V).

FDG328P Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		20 ± 12 1.5 6 0.75 0.48 -55 to +150	V V A W °C
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Maximum Power Dissipation	(Note 1a) (Note 1b)
T_J,T_STG	Operating and Storage Junction Temperature Range

FDG328P Features

• 1.5 A, 20 V. R_DS(ON) = 0.145 Ω @ V_GS = 4.5 V R_DS(ON) = 0.210 Ω @ V_GS= 2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package

FDG328P Typical Application

• Load switch
• Power management
• DC/DC converter

FDG328P Connection Diagram

FDG329N Parameters

Technical/Catalog Information	FDG329N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	90 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	324pF @ 10V
Power - Max	380mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.6nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG329N FDG329N

FDG329N General Description

FDG329N Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		20 ± 12 1.5 6 0.42 0.38 -55 to +150	V V A W °C
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
T_J, T_STG	Operating and Storage Junction Temperature Range

FDG329N Features

· 1.5 A, 20 V. RDS(ON) = 90 mW @ VGS = 4.5 V. RDS(ON) = 115 mW @ VGS = 2.5 V
· Fast switching speed
· Low gate charge (3.3 nC typical)
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability.

FDG329N Typical Application

· DC/DC converter
· Power management
· Load switch

FDG329N Connection Diagram

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