FDG314P

MOSFET SC70-6 P-CH -25V

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SeekIC No. : 00163106 Detail

FDG314P: MOSFET SC70-6 P-CH -25V

floor Price/Ceiling Price

Part Number:
FDG314P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.65 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SC-70-6
Configuration : Single Quad Drain
Drain-Source Breakdown Voltage : - 25 V
Resistance Drain-Source RDS (on) : 1.1 Ohms
Continuous Drain Current : 0.65 A


Features:

• -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
• Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) <1.5 V).
• Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model).
• Compact industry standard SC70-6 surface mount package.



Application

• Power Management
• Load switch
• Signal switch



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-25
±8
-0.65
-1.8
0.75
0.48
-55 to +150
6.0
V
V
A

W

°C
kV
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
TJ,TSTG
ESD
Operating and Storage Junction Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)



Description

This FDG314P P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.




Parameters:

Technical/Catalog InformationFDG314P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C650mA
Rds On (Max) @ Id, Vgs1.1 Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds 63pF @ 10V
Power - Max480mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.5nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG314P
FDG314P



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