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FDG6304, FDG6304P, FDG6304P-NL

Table of contents:
Info of FDG6304
Info of FDG6304P
Info of FDG6304P-NL

FDG6304, FDG6304P, FDG6304P-NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:12000 D/C:07+

FDG6304, FDG6304P, FDG6304P-NL Datasheet download

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Part Number: FDG6304P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: 12000

D/C: 07+

Description: IC FET DGTL P-CHAN DUAL SC70-6

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FDG6304P Parameters

Technical/Catalog Information	FDG6304P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	410mA
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) @ Vds	62pF @ 10V
Power - Max	300mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	1.5nC @ 4.5V
Package / Case	SC-70-6
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG6304P FDG6304P FDG6304PCT ND FDG6304PCTND FDG6304PCT

FDG6304P General Description

These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

FDG6304P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage	-25 -8 -0.41 -1.5 0.3 -55 to 150 6.0	V V A W °C kV
I_D	Drain Current Continuous Pulsed
P_D	Power Dissipation for Single Operation
T_J, T_STG	Operating and Storage Junction Temperature Range
ESD	Electrostatic Discharge Rating MIL-STD-883D Human Body Model ( 100pF / 1500Ω )

THERMAL CHARACTERISTICS

RJA

Thermal Resistance, Junction-to-Ambient (Note 1)

415

°C/W

FDG6304P Features

·-25 V, -0.41 A continuous, -1.5 A peak.
·RDS(ON) = 1.1 W @ VGS= -4.5 V,
·RDS(ON) = 1.5 W @ VGS= -2.7 V.
·Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
·Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
·Compact industry standard SC70-6 surface mount package.

FDG6304P Connection Diagram

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