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This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.6A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q2) in one tiny SC70-6 package.
FDG6323L Maximum Ratings
Product
Product status
Eco Status
Pricing*
Package type
Leads
Packing method
Package Drawing
Package Marking Convention**
FDG6323L
Full Production
RoHS Compliant
$0.192
SC70-6
6
TAPE REEL
Line 1: &Y (Binary Calendar Year Coding) Line 2: .23
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples
Package marking information for product FDG6323L is available. Click here for more information .
FDG6323L Features
`VDROP=0.2V @ VIN=5V, IL=0.36A. R(ON) = 0.55 VDROP=0.2V @ VIN=2.5V, IL=0.27A. R(ON) = 0.75. `Very small package outline SC70-6. `Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model). `High density cell design for extremely low on-resistance. `Compact industry standard SC70-6 surface mount package.
FDG6323L Connection Diagram
FDG6324L Parameters
Technical/Catalog Information
FDG6324L
Vendor
Fairchild Semiconductor
Category
Integrated Circuits (ICs)
Type
High Side Switch
Number of Outputs
1
Voltage - Input
3 ~ 20 V
Package / Case
SC-70-6, SC-88, SOT-323-6, SOT-363
Packaging
Tape & Reel (TR)
Current Limit
600mA
Internal Switch(s)
Yes
Operating Temperature
-55°C ~ 150°C
Rds (On)
550 mOhm
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDG6324L FDG6324L
FDG6324L General Description
This device is intended to be configured as a load switch and is particularly suited for compact computer peripheral switching applications where 3V to 20V input and 0.6A output current capability are needed. This device features a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SC70-6 package.
FDG6324L Maximum Ratings
Symbol
Parameter
FDG6324L
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
3 - 20 2.5 - 8 0.6 1.8 0.3 -55 to 150 6
V V A
W °C kV
ID
Drain Current Continuous Pulsed
(Note 1) (Note 1 & 3)
PD
Power Dissipation for Single Operation
(Note 2)
TJ,TSTG ESD
Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500OHM)
THERMAL CHARACTERISTICS
RJA
Thermal Resistance, Junction-to-Ambient
415
°C/W
FDG6324L Features
`VDROP=0.2V @ VIN=12V, IL=0.36A. R(ON) = 0.55. VDROP=0.2V @ VIN=5V, IL=0.27A. R(ON) = 0.75. `Very small package outline (SC70-6). `Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model). `High density cell design for extremely low on-resistance.