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This device is particularly suited for compact powermanagement in portable electronic equipment where2.5V to 8V input and 0.8A output current capability areneeded. This load switch integrates a small N-Channelpower MOSFET (Q1) that drives a large P-Channelpower MOSFET (Q2) in one tiny SC70-6 package.
FDG6331L Maximum Ratings
Product
Product status
Eco Status
Pricing*
Package type
Leads
Packing method
Package Drawing
Package Marking Convention**
FDG6331L
Full Production
RoHS Compliant
$0.204
SC70-6
6
TAPE REEL
Line 1: &Y (Binary Calendar Year Coding) Line 2: .31
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples
Package marking information for product FDG6331L is available. Click here for more information .
FDG6331L Features
• 0.8 A, 8 V. RDS(ON) = 260 mΩ @ VGS = 4.5 V RDS(ON) = 330 mΩ @ VGS = 2.5 V RDS(ON) = 450 mΩ @ VGS = 1.8 V • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model) • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
FDG6332C Maximum Ratings
Symbol
Parameter
Q1
Q2
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
20 ±12 0.7 2.1
20 ±12 0.6 2
V V A
W
°C
ID
Drain Current Continuous Pulsed
(Note 1)
PD
Power Dissipation for Single Operation
(Note 1)
0.3 55 to +150
TJ,TSTG
Operating and Storage Junction Temperature Range
FDG6332C Features
` Q1 0.7 A, 20V. RDS(ON) = 300 mW @ VGS = 4.5 V RDS(ON) = 400 mW @ VGS = 2.5 V ` Q2 0.6 A, 20V. RDS(ON) = 420 mW @ VGS = 4.5 V RDS(ON) = 630 mW @ VGS = 2.5 V ` Low gate charge ` High performance trench technology for extremely low RDS(ON) ` SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)