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FDG6331L, FDG6331L-NL, FDG6332C

FDG6331L, FDG6331L-NL, FDG6332C Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:IN STOCK BRAND NEW ORIGINAL  D/C:2002+

FDG6331L Picture

FDG6331L, FDG6331L-NL, FDG6332C Datasheet download

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Part Number: FDG6331L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: IN STOCK BRAND NEW ORIGINAL

D/C: 2002+

Description: MOSFET N/P-CH 20V SC70-6

 

 
 
 
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  • FDG6331L

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2026-07-15
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  • ALCON TECHNOLOGY CO., LTD.   China
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About FDG6331L

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Datasheet: FDG6331L

File Size: 56117 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDG311

  • Vendor: Fairchild Pack: SOT D/C: 02+& Qty: 549 Note: IC  Adddate: 2026-07-15
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  • FDG311N-NL

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About FDG311N

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Datasheet: FDG311N

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About FDG6332C

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Datasheet: FDG6332C

File Size: 95302 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDG6331L Parameters

Technical/Catalog InformationFDG6331L
VendorFairchild Semiconductor (VA)
CategoryIntegrated Circuits (ICs)
TypeHigh Side Switch
Number of Outputs1
Voltage - Input2.5 ~ 8 V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingDigi-Reel?
Current Limit800mA
Internal Switch(s)Yes
Operating Temperature-55°C ~ 150°C
Rds (On)260 mOhm
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6331L
FDG6331L
FDG6331LDKR ND
FDG6331LDKRND
FDG6331LDKR

FDG6331L General Description

This device is particularly suited for compact powermanagement in portable electronic equipment where2.5V to 8V input and 0.8A output current capability areneeded. This load switch integrates a small N-Channelpower MOSFET (Q1) that drives a large P-Channelpower MOSFET (Q2) in one tiny SC70-6 package.

FDG6331L Maximum Ratings

      

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FDG6331LFull ProductionRoHS Compliant$0.204SC70-66TAPE REEL Line 1: &Y (Binary Calendar Year Coding)
Line 2: .31
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDG6331L is available. Click here for more information .

FDG6331L Features

• 0.8 A, 8 V. RDS(ON) = 260 mΩ @ VGS = 4.5 V RDS(ON) = 330 mΩ @ VGS = 2.5 V RDS(ON) = 450 mΩ @ VGS = 1.8 V
• Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package

FDG6331L Typical Application

• Power management
• Load switch

FDG6331L Connection Diagram

FDG6332C Parameters

Technical/Catalog InformationFDG6332C
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C600mA
Rds On (Max) @ Id, Vgs300 mOhm @ 700A, 4.5V
Input Capacitance (Ciss) @ Vds 113pF @ 10V
Power - Max300mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs1.5nC @ 4.5V
Package / CaseSC-70-6
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6332C
FDG6332C
FDG6332CDKR ND
FDG6332CDKRND
FDG6332CDKR

FDG6332C General Description

The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

FDG6332C Maximum Ratings

Symbol
Parameter
Q1
Q2
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
±12
0.7
2.1
20
±12
0.6
2
V
V
A

W

°C
ID
Drain Current Continuous Pulsed (Note 1)

PD

Power Dissipation for Single Operation (Note 1)
0.3
55 to +150
TJ,TSTG Operating and Storage Junction Temperature Range

FDG6332C Features

` Q1 0.7 A, 20V. RDS(ON) = 300 mW @ VGS = 4.5 V RDS(ON) = 400 mW @ VGS = 2.5 V
` Q2 0.6 A, 20V. RDS(ON) = 420 mW @ VGS = 4.5 V RDS(ON) = 630 mW @ VGS = 2.5 V
` Low gate charge
` High performance trench technology for extremely low RDS(ON)
` SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)

FDG6332C Typical Application

· DC/DC converter
· Load switch
· LCD display inverter

FDG6332C Connection Diagram

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