Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDW2520C Maximum Ratings
Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
20
20
V
VGSS
Gate-Source Voltage
±12
±12
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
6
4.4
A
30
30
PD
Power Dissipation (Note 1a) (Note 1b)
1.0
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDW2520C Features
Q1: N-Channel 6 A, 20 V. R DS(ON) = 18 m@ VGS = 4.5 V R DS(ON) = 28 m@ VGS = 2.5 V Q2: P-Channel 4.4A, 20 V. RDS(ON) = 35 m@ VGS = 4.5 V RDS(ON) = 57 m@ VGS = 2.5 V High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package
FDW2520C Typical Application
DC/DC conversion Power management Load switch
FDW2520C Connection Diagram
FDW2521C Parameters
Technical/Catalog Information
FDW2521C
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N and P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25° C
5.5A, 3.8A
Rds On (Max) @ Id, Vgs
21 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds
1082pF @ 10V
Power - Max
600mW
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
17nC @ 4.5V
Package / Case
8-TSSOP
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDW2521C FDW2521C
FDW2521C General Description
This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDW2521C Maximum Ratings
Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
20
20
V
VGSS
Gate-Source Voltage
±12
±12
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
5.5
3.8
A
30
30
PD
Power Dissipation (Note 1a) (Note 1b)
1.0
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDW2521C Features
* Q1: N-Channel 5.5 A, 20 V. RDS(ON) = 21 m @ VGS = 4.5 V RDS(ON) = 35 m @ VGS = 2.5 V * Q2: P-Channel 3.8 A, 20 V. RDS(ON) = 43 m @ VGS = 4.5 V RDS(ON) = 70 m @ VGS = 2.5 V * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
FDW2521C Typical Application
DC/DC conversion Power management Load switch
FDW2521C Connection Diagram
FDW252P Parameters
Technical/Catalog Information
FDW252P
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25° C
8.8A
Rds On (Max) @ Id, Vgs
12.5 mOhm @ 8.8A, 4.5V
Input Capacitance (Ciss) @ Vds
5045pF @ 10V
Power - Max
600mW
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
66nC @ 4.5V
Package / Case
8-TSSOP
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDW252P FDW252P
FDW252P General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
FDW252P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
-8.8
A
-50
PD
Total Power Dissipation (Note 1a) (Note 1b)
1.3
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
FDW252P Features
8.8 A, 20 V. RDS(ON) = 0.012 @ VGS = 4.5 V RDS(ON) = 0.018 @ VGS = 2.5 V Extended VGSS range ( ±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package
FDW252P Typical Application
Load switch Motor drive DC/DC conversion Power management
