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This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V 8V).
FDW254P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current Continuous (Note 1a) Pulsed
-9.2
A
-50
PD
Total Power Dissipation (Note 1a) (Note 1b)
1.3
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
FDW254P Features
9.2 A, 20 V. RDS(ON) = 0.012@ VGS = 4.5 V RDS(ON) = 0.015@ VGS = 2.5 V RDS(ON) = 0.0215@ VGS = 1.8 V Rds ratings for use with 1.8 V logic Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package
FDW254P Typical Application
Load switch Motor drive DC/DC conversion Power management
FDW254P Connection Diagram
FDW254PZ Parameters
Technical/Catalog Information
FDW254PZ
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25° C
9.2A
Rds On (Max) @ Id, Vgs
12 mOhm @ 9.2A, 4.5V
Input Capacitance (Ciss) @ Vds
5880pF @ 10V
Power - Max
1W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
96nC @ 4.5V
Package / Case
8-TSSOP
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDW254PZ FDW254PZ
FDW254PZ General Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V 8V).
FDW254PZ Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current Continuous (Note 1a) Pulsed
-9.2
A
-50
PD
Total Power Dissipation (Note 1a) (Note 1b)
1.4
W
1
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
FDW254PZ Features
9.2 A, 20 V. RDS(ON) = 12 m@ VGS = 4.5 V
RDS(ON) = 15 m@ VGS = 2.5 V
RDS(ON) = 21.5 m@ VGS = 1.8 V
Rds ratings for use with 1.8 V logic
ESD protection diode
Low gate charge
High performance trench technology for extremely low RDS(ON)