H5N3011P-E, H5N5001FM, H5N5004PL Selling Leads, Datasheet
MFG:HIT Package Cooled:TO D/C:05/06
H5N3011P-E, H5N5001FM, H5N5004PL Datasheet download
Part Number: H5N3011P-E
MFG: HIT
Package Cooled: TO
D/C: 05/06
H5N3011P-E, H5N5001FM, H5N5004PL
- Table of contents:
Info of H5N3011P-E
Info of H5N5001FM
Info of H5N5004PL
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About H5N2005DL
PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About H5N2005DL
PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About H5N2005DL
PDF/DataSheet Download
Datasheet: H5N2005DL
File Size: 53863 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
H5N5001FM Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature |
VDSS VGSS ID ID(pulse) Note1 IDR IDR(pulse) Note1 IAP Note3 Pch Note2 ch-c Tch Tstg |
500 ±30 5 20 5 20 5 30 4.17 150 55 to +150 |
V V A A A A A W /W |
H5N5001FM Features
· Low on-resistance : RDS(on) =1.1W typ.
· Low leakage current : IDSS =1mA max (at VDS = 500 V)
· High speed switching : tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
· Low gate charge : Qg = 15nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
· Avalanche ratings
· Low leakage current : IDSS =1mA max (at VDS = 500 V)
· High speed switching : tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
· Low gate charge : Qg = 15nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
· Avalanche ratings
H5N5004PL Maximum Ratings
|
Item |
Symbol |
Value |
Unit |
| Drain to source voltage |
VDSS |
500 |
V |
| Gate to source voltage |
VGSS |
±30 |
V |
| Drain current |
ID |
50 |
A |
| Drain peak current |
ID (pulse)Note 1 |
200 |
A |
| Body-drain diode reverse drain current |
IDR |
50 |
A |
| Body-drain diode reverse drain peak current |
IDR (pulse)Note 1 |
200 |
A |
| Avalanche current |
IAP Note 3 |
15 |
A |
| Channel dissipation |
Pch Note 2 |
250 |
W |
| Channel to case thermal Impedance |
ch-c |
0.5 |
/W |
| Channel temperature |
Tch |
150 |
|
| Storage Temperature |
Tstg |
-55 to +150 |
2. Value at Tc = 25
3. Tch 150
H5N5004PL Features
• Low on-resistance: R DS (on) = 0.09 Ω typ.
• Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
• High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A)
• Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 190 ns typ
• Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
• High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A)
• Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 190 ns typ
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