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H7L6S, H7L6-W11, H7N0203AB

H7L6S, H7L6-W11, H7N0203AB Selling Leads, Datasheet

MFG:SGS THOMAS  Package Cooled:QFP  D/C:QFP

H7L6S, H7L6-W11, H7N0203AB Picture

H7L6S, H7L6-W11, H7N0203AB Datasheet download

Five Points

Part Number: H7L6S

 

MFG: SGS THOMAS

Package Cooled: QFP

D/C: QFP

 

 

 
 
 
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H7L6S Suppliers

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  • H7L6

  • Vendor: ST Pack: QFP Qty: 60 Note: IN STOCK  Adddate: 2024-04-19
  • Inquire Now
  • Trustful International Co.,Ltd   China
    Contact: Ms.MiggieLo   MSN:sale@hktrustful.com
    Tel: 86-755-3306-2583
    Fax: 86-755-3306-2583
    (0)

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H7L6-W11 Suppliers

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  • H7L6

  • Vendor: ST Pack: QFP Qty: 60 Note: IN STOCK  Adddate: 2024-04-19
  • Inquire Now
  • Trustful International Co.,Ltd   China
    Contact: Ms.MiggieLo   MSN:sale@hktrustful.com
    Tel: 86-755-3306-2583
    Fax: 86-755-3306-2583
    (0)

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H7N0203AB Suppliers

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About H7N0203AB

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Datasheet: H7N0203AB

File Size: 126666 KB

Manufacturer: RENESAS [Renesas Technology Corp]

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H7N0203AB Maximum Ratings

Item Symbol Ratings Unit
Drain to source voltage VDSS 20 V
Gate to source voltage VGSS ±20 V
Drain current ID 90 A
Drain peak current ID(pulse) Note 1 360 A
Body-drain diode reverse drain current IDR 90 A
Avalanche current IAP Note2 20 A
Avalanche energy EAR Note2 40 mJ
Channel dissipation Pch Note 3 100 W
Channel to Case Thermal Impedance ch-c 1.25 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C

H7N0203AB Features

Low on-resistance
RDS(on) =2.4 mΩ typ.
Low drive current
4.5 V gate drive device can be driven from 5 V source

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