H7N0312LD, H7N0312LM, H7N0312LS Selling Leads, Datasheet
MFG:HITACHI Package Cooled:04+ D/C:2000
H7N0312LD, H7N0312LM, H7N0312LS Datasheet download
Part Number: H7N0312LD
MFG: HITACHI
Package Cooled: 04+
D/C: 2000
H7N0312LD, H7N0312LM, H7N0312LS
- Table of contents:
Info of H7N0312LD
Info of H7N0312LM
Info of H7N0312LS
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About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
About H7N0203AB
PDF/DataSheet Download
Datasheet: H7N0203AB
File Size: 126666 KB
Manufacturer: RENESAS [Renesas Technology Corp]
Download : Click here to Download
H7N0312LD Maximum Ratings
|
Item |
Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 30 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 85 | A |
| Drain peak current | ID(pulse)Note 1 | 340 | A |
| Body-drain diode reverse drain current | IDR | 85 | A |
| Channel dissipation | Pch Note 2 | 125 | W |
| Channel to Case Thermal Impedance | ch-c | 1.0 | /W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | 55 to +150 |
2. Value at Tc = 25
H7N0312LD Features
• Low on-resistance
• RDS(on) = 2.6 m typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
• RDS(on) = 2.6 m typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
H7N0312LM Maximum Ratings
|
Item |
SYMBOL |
MAX |
UNIT |
| Drain to source voltage |
VDSS |
30 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
85 |
A |
| Drain peak current |
I (pulse) Note1 |
340 |
A |
| Body-drain diode reverse drain current |
IDR |
85 |
A |
| Channel dissipation |
PchNote2 |
125 |
W |
| Channel to case Thermal impedance |
ch-c |
1.0 |
/W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |
2. Value at Tc = 25
H7N0312LM Features
• Low on-resistance
RDS (on) = 2.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
RDS (on) = 2.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
H7N0312LS Maximum Ratings
|
Item |
Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 30 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 85 | A |
| Drain peak current | ID(pulse)Note 1 | 340 | A |
| Body-drain diode reverse drain current | IDR | 85 | A |
| Channel dissipation | Pch Note 2 | 125 | W |
| Channel to Case Thermal Impedance | ch-c | 1.0 | /W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | 55 to +150 |
2. Value at Tc = 25
H7N0312LS Features
• Low on-resistance
• RDS(on) = 2.6 m typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
• RDS(on) = 2.6 m typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
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