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IP-HAMD-CM, IPI03N03LA, IPI04N03LA

IP-HAMD-CM, IPI03N03LA, IPI04N03LA Selling Leads, Datasheet

MFG:Infineon Technologies  Category:Discrete Semiconductor Products  Package Cooled:DC135-354V  D/C:DC/DC/600W

IPI04N03LA Picture

IP-HAMD-CM, IPI03N03LA, IPI04N03LA Datasheet download

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Part Number: IPI04N03LA

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: DC135-354V

D/C: DC/DC/600W

Description: MOSFET N-CH 25V 80A TO-262

 

 
 
 
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  • IPI14N03LA

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 390  Adddate: 2024-03-29
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IPI03N03LA

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Datasheet: IPI03N03LA

File Size: 325310 KB

Manufacturer: INFINEON [Infineon Technologies AG]

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IPI04N03LA Suppliers

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  • IPI14N03LA

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 390  Adddate: 2024-03-29
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IPI04N03LA

PDF/DataSheet Download

Datasheet: IPI04N03LA

File Size: 356533 KB

Manufacturer: INFINEON [Infineon Technologies AG]

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IPI03N03LA Parameters

Technical/Catalog InformationIPI03N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds 7027pF @ 15V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs57nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI03N03LA
IPI03N03LA

IPI03N03LA Maximum Ratings

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 2) 80 A
TC=100 80
Pulsed drain current ID,pulse TC=25 3) 385
Avalanche energy, single pulse EAS ID=80 A, RGS=25 Ω 960 mJ
Reverse diode dv /dt dv /dt ID=80 A, VDS=20 V, di /dt =200 A/µs,
T j,max=175
6 kV/µs
Gate source voltage4) VGS   ±20 V
Power dissipation Ptot TC=25 °C 150 W
Operating and storage temperature Tj, Tstg   -55 ...175
IEC climatic category; DIN IEC 68-1     55/175/56  

IPI03N03LA Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated

IPI04N03LA Parameters

Technical/Catalog InformationIPI04N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4.2 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds 3877pF @ 15V
Power - Max107W
PackagingTube
Gate Charge (Qg) @ Vgs32nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPI04N03LA
IPI04N03LA
IPI04N03LAIN ND
IPI04N03LAINND
IPI04N03LAIN

IPI04N03LA Maximum Ratings

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 80 A
TC=100 °C 80 A
Pulsed drain current ID,pulse TC=25 °C 385 A
Avalanche energy, single pulse EAS ID=77 A, RGS=25 Ω 290 mJ
Reverse diode dv /dt dv /dt ID=80 A, VDS=20 V,
di /dt =200 A/µs,
Tj,max=175 °C
6 kV/µs
Gate source voltage VGS   ±20 V
Power dissipation Ptot TC=25 °C 107 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  

IPI04N03LA Features

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated

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