MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:PG-TO262-3-1 D/C:07+pbfree
IPI12CN10N G, IPI12CNE8NG, IPI14N03LA Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: PG-TO262-3-1
D/C: 07+pbfree
Description: MOSFET N-CH 25V 30A I2PAK
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PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI14N03LA
File Size: 355244 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|
Continuous drain current |
ID |
T C=25 |
67 |
A |
|
T C=100 |
48 | |||
|
Pulsed drain current2) |
ID,pulse |
T C=25 |
268 | |
|
Avalanche energy, single pulse |
EAS |
I D=67A, RGS=25 |
154 |
mJ |
|
Reverse diode dv /dt |
dv/dt |
ID=67A, VDS=68V, |
6 |
kV/µs |
|
Gate source voltage3) |
VGS |
|
±20 |
V |
|
Power dissipation |
Ptot |
T C=25 |
125 |
W |
|
Operating and storage temperature |
Tj, Tstg |
|
-55...175 |
|
|
IEC climatic category; DIN IEC 68-1 |
|
|
55/175/56 |
|
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
| Technical/Catalog Information | IPI14N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 13.9 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1043pF @ 15V |
| Power - Max | 46W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 8.3nC @ 5V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI14N03LA IPI14N03LA |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 °C | 30 | A |
| TC=100 °C | 30 | A | ||
| Pulsed drain current | ID,pulse | TC=25 °C | 210 | A |
| Avalanche energy, single pulse | EAS | ID=77 A, RGS=25 Ω | 60 | mJ |
| Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, Tj,max=175 °C |
6 | kV/µs |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 46 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... 175 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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