MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:PG-TO262-3-1 D/C:07+pbfree
IPI16CN10N G, IPI16CNE8NG, IPI25N06S3-25 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: PG-TO262-3-1
D/C: 07+pbfree
Description: MOSFET N-CH 55V 25A TO-262
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PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | T C=25 | 53 | A |
| T C=100 | 38 | |||
| Pulsed drain current2) | ID,pulse | T C=25 | 212 | |
| Avalanche energy, single pulse | EAS | I D=53A, RGS=25 | 107 | mJ |
| Reverse diode dv /dt | dv/dt | ID=53A, VDS=68V, di/dt =100 A/µs, Tj,max=175 |
6 | kV/µs |
| Gate source voltage3) | VGS | ±20 | V | |
| Power dissipation | Ptot | T C=25 | 100 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... 175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
| Technical/Catalog Information | IPI25N06S3-25 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 25A |
| Rds On (Max) @ Id, Vgs | 25.1 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 1862pF @ 25V |
| Power - Max | 48W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 41nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI25N06S3 25 IPI25N06S325 IPI25N06S3 25IN ND IPI25N06S325INND IPI25N06S3-25IN |
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
| Continuous drain current |
ID |
TC=25, VGS=10V |
25 |
A |
|
TC=100,VGS=10V |
23 | |||
| Pulsed drain current |
IDP |
TC=25 |
100 | |
| Avalanche energy, single pulse |
EAS |
I D=12 A |
60 |
mJ |
| Drain gate voltage |
VDG |
55 |
V | |
| Gate source voltage |
VGS |
±20 |
V | |
| Power dissipation |
Ptot |
TC=25 |
48 |
W |
| Operating and storage temperature |
Tj,Tstg |
-55 ... +175 |
||
| IEC climatic category; DIN IEC 68-1 |
55/175/56 |
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