MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-262 D/C:08+
IPI25N06S3L-22, IPI26CN10N G, IPI26CNE8NG Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: TO-262
D/C: 08+
Description: MOSFET N-CH 55V 25A I2PAK
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PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | IPI25N06S3L-22 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 25A |
| Rds On (Max) @ Id, Vgs | 21.6 mOhm @ 17A, 10V |
| Input Capacitance (Ciss) @ Vds | 2260pF @ 25V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 47nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI25N06S3L 22 IPI25N06S3L22 |
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|
Continuous drain current1) |
I D |
T C=25 , VGS=10 V |
25 |
A |
|
T C=100 , VGS=10 V2) |
25 | |||
|
Pulsed drain current2) |
I D,pulse |
T C=25 |
100 | |
|
Avalanche energy, single pulse3) |
EAS |
I D=12A |
60 |
mJ |
|
Drain gate voltage2) |
VDG |
55 |
V | |
|
Gate source voltage4) |
VGS |
±16 |
V | |
|
Power dissipation |
Ptot |
T C=25 |
50 |
W |
|
Operating and storage temperature |
T j, T stg |
-55 ... +175 |
||
|
IEC climatic category; DIN IEC 68-1 |
55/175/56 |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | I D | T C=25 | 35 | A |
| T C=100 | 25 | |||
| Pulsed drain current2) | I D,pulse | T C=25 | 140 | |
| Avalanche energy, single pulse | EAS | I D=35 A, RGS=25 | 65 | mJ |
| Reverse diode dv /dt | dv /dt | I D=35 A, VDS=68 V, di /dt =100 A/s, Tj,max=175 |
6 | kV/s |
| Gate source voltage3) | VGS | ±20 | V | |
| Power dissipation | Ptot | T C=25 | 71 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... 175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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