MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:07+
IRL1004SPBF, IRL1004STRPBF, IRL103DIS Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-263
D/C: 07+
Description: MOSFET N-CH 40V 130A D2PAK
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRL1004SPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 130A |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 78A, 10V |
| Input Capacitance (Ciss) @ Vds | 5330pF @ 25V |
| Power - Max | 200W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 100nC @ 4.5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL1004SPBF IRL1004SPBF |
IRL1004SPbF is a kind of power MOSFET.Here you can get some information about the features.First is logic-level gate drive.The second is advanced process technology.Then is ultra low on-resistance.Next is dynamic dv/dt rating.The fifth is 175 operating temperature.The sixth is fast switching.The seventh is fully avalanche rated.The last one is lead-free.
The following is about the absolute maximum ratings.The maximum VGS (gate-source voltage) is ±16 V.The maximum ID (continuous drain current) is 130 A at TC=25,VGS=10 V and 92 A at TC=100,VGS=10 V.The maximum IDM (pulsed drain current) is 520 A.The maximum PD (power dissipation) is 3.8 W at TA=25 and 200 W at TC=25.The maximum dv/dt (peak diode recovery dv/dt) is 5.0 V/ns.The EAR (repetitive avalanche energy) is 20 mJ.The EAS (single pulse energy) is 700 mJ.The maximum IAR (avalanche current) is 78 A.The TJ and TSTG (operating junction and storage temperature range) are both from -55 to +175.Then is about the thermal resistance.The maximum RJA (Junction-to-Ambient) is 40/W.The maximum RJC (Junction-to-Case) is 0.75/W.
There are the electrical characteristics at TJ=25.The minimum V(BR)DSS (drain-to-source breakdown voltage) is 40 V at VGS=0 V,ID=250A.The typical V(BR)DSS/TJ (breakdown voltage temperature coefficient) is 0.04 V/ at reference to 25 and ID=1 mA.The minimum VGS(th) (gate threshold voltage) is 1.0 V at VDS=VGS,ID=250A.The typical gfs (gate threshold voltage) is 63 S at VDS=25 V,ID=78 A.The maximum IDSS (drain to source leakage current) is 25A at VDS=40 V,VGS=0 V and is 250A at VDS=32 V,VGS=0 V,TJ=150.The maximum (IGSS) (gate-to-source forward leakage) is 100 nA at VGS=16 V and the (IGSS) (gate-to-source reverse leakage) is -100 nA at VGS=-16 V.
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