MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled: I R D/C:TO:252
IRL3104S, IRL3105, IRL3202 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: I R
D/C: TO:252
Description: MOSFET N-CH 20V 48A TO-220AB
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL3202
File Size: 91693 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRL3202 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 48A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 29A, 7V |
| Input Capacitance (Ciss) @ Vds | 2000pF @ 15V |
| Power - Max | 69W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 43nC @ 4.5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRL3202 IRL3202 |
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry.
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @4.5V |
48 |
|
| ID @ TC = 100°C | Continuous Drain Current, VGS @4.5V |
30 |
A |
| IDM | Pulsed Drain Current |
190 |
|
| PD @TC = 25°C | Power Dissipation |
69 |
W |
| Linear Derating Factor |
0.56 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 10 |
V |
| VGSM | Gate-to-Source Voltage (Start Up Transient, tp = 100s) |
14 |
V |
| EAS | Single Pulse Avalanche Energy |
270 |
mJ |
| IAR | Avalanche Current |
29 |
A |
| EAR | Repetitive Avalanche Energy |
6.9 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
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