IRL3202S, IRL3202SPBF, IRL3205S Selling Leads, Datasheet
MFG:IR Package Cooled:. D/C:06+
IRL3202S, IRL3202SPBF, IRL3205S Datasheet download
Part Number: IRL3202S
MFG: IR
Package Cooled: .
D/C: 06+
IRL3202S, IRL3202SPBF, IRL3205S
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Info of IRL3202S
Info of IRL3202SPBF
Info of IRL3205S
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About IRL3202S
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Datasheet: IRL3202S
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About IRL1004
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Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
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About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRL3202S General Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
IRL3202S Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, V GS @ 4.5V | 48 | A |
| ID @ TC = 100°C | Continuous Drain Current, V GS @ 4.5V | 30 | A |
| IDM | Pulsed Drain Current | 190 | A |
| PD @TC = 25°C | Power Dissipation | 69 | W |
| Linear Derating Factor | 0.56 | W/°C | |
| VGS | Gate-to-Source Voltage | ±10 | V |
| VGSM | Gate-to-Source Voltage (Start Up Transient, tp = 100s) |
14 | V |
| EAS | Single Pulse Avalanche Energy | 270 | mJ |
| IAR | Avalanche Current | 29 | A |
| EAR | Repetitive Avalanche Energy | 6.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
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