MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-262 D/C:02
IRL520L, IRL520N, IRL520NL Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-262
D/C: 02
Description: MOSFET N-CH 100V 10A TO-220AB
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRL520N
File Size: 137469 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRL520NL
File Size: 191327 KB
Manufacturer:
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| Technical/Catalog Information | IRL520N |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 36A |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 440pF @ 25V |
| Power - Max | 48W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRL520N IRL520N |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 10 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 7.1 | |
| IDM | Pulsed Drain Current | 35 | |
| PD @TC = 25°C | C Power Dissipation | 48 | W |
| Linear Derating Factor | 0.32 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 85 | mJ |
| IAR | Avalanche Current | 6.0 | A |
| EAR | Repetitive Avalanche Energy | 4.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and TSTG Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL520NL) is available for lowprofile applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 10 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 7.1 | A |
| IDM | Pulsed Drain Current | 35 | A |
| PD @ TA = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 48 | W |
| Linear Derating Factor | 0.32 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 85 | mJ |
| IAR | Avalanche Current | 6.0 | A |
| EAR | Repetitive Avalanche Energy | 4.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
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