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IRL540NLPBF, IRL540NPBF, IRL540NS

Table of contents:
Info of IRL540NLPBF
Info of IRL540NPBF
Info of IRL540NS

IRL540NLPBF, IRL540NPBF, IRL540NS Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:05+ D/C:TO-262

IRL540NLPBF, IRL540NPBF, IRL540NS Datasheet download

Five Points

Part Number: IRL540NLPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: 05+

D/C: TO-262

Description: MOSFET N-CH 100V 36A D2PAK

Price Break

1
10
100
250
500
1000
2500
10000

Unit Price

2.13000
1.38000
1.05640
.99776
.93484
.89450
.85968
.79002

Extended Price

2.13
13.80
105.64
249.44
467.42
894.50
2149.20
7900.20

(All prices are in USD) Prices for reference only

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IRL540NLPBF Parameters

Technical/Catalog Information	IRL540NLPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	44 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 25V
Power - Max	140W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	74nC @ 5V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL540NLPBF IRL540NLPBF

IRL540NPBF Parameters

Technical/Catalog Information	IRL540NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	44 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 25V
Power - Max	140W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	74nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL540NPBF IRL540NPBF

IRL540NS Parameters

Technical/Catalog Information	IRL540NS
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	44 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 25V
Power - Max	140W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	74nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRL540NS IRL540NS

IRL540NS General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF540NL) is available for lowprofile applications.

IRL540NS Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C= 25°C	Continuous Drain Current, V_GS @10V	36
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @10V	26	A
I_DM	Pulsed Drain Current	120
P_D @T_A = 25°C	Power Dissipation	3.8	W
P_D @T_C = 25°C	Power Dissipation	140
	Linear Derating Factor	0.91	W/°C
V_GS	Gate-to-Source Voltage	± 16	V
E_AS	Single Pulse Avalanche Energy	310	mJ
I_AR	Avalanche Current	18	A
E_AR	Repetitive Avalanche Energy	14	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

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