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IRL640A, IRL640NS, IRL644NS

Table of contents:
Info of IRL640A
Info of IRL640NS
Info of IRL644NS

IRL640A, IRL640NS, IRL644NS Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+/09+

IRL640A, IRL640NS, IRL644NS Datasheet download

Five Points

Part Number: IRL640A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 08+/09+

Description: MOSFET N-CHAN 200V 18A TO-220

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IRL640A Parameters

Technical/Catalog Information	IRL640A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	180 mOhm @ 9A, 5V
Input Capacitance (Ciss) @ Vds	1705pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL640A IRL640A

IRL640A Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	200	V
I_D	Continuous Drain Current (T_C=25°C)	18	A
I_D	Continuous Drain Current (T_C=100°C)	11.4	A
I_DM	Drain Current-Pulsed (1)	63	A
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulsed Avalanche Energy (2)	64	mJ
I_AR	Avalanche Current (1)	18	A
E_AR	Repetitive Avalanche Energy (1)	11	mJ
dv/dt	Peak Diode Recovery dv/dt (2)	5	V/ns
P_D	Total Power Dissipation (T_C=25°C) Linear Derating Factor	110 0.88	W W/°C
T_J , T_STG	Operating Junction and Storage Temperature Range	- 55 to +150	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds	300	°C

IRL640A Features

Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10A (Max.) @ V_DS = 200V
Lower R_DS(ON): 0.145W (Typ.)

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