IRLBA1404P, IRLBA1405P, IRLBA3803 Selling Leads, Datasheet
MFG:ir Package Cooled:TO-262 D/C:08+
IRLBA1404P, IRLBA1405P, IRLBA3803 Datasheet download
Part Number: IRLBA1404P
MFG: ir
Package Cooled: TO-262
D/C: 08+
IRLBA1404P, IRLBA1405P, IRLBA3803
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Info of IRLBA1404P
Info of IRLBA1405P
Info of IRLBA3803
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About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRLBA3803
PDF/DataSheet Download
Datasheet: IRLBA3803
File Size: 123508 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRLBA3803 General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The Super-220 is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. It has increased current handling capability over both the TO-220 and the much larger TO-247 package.
This makes it ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline.
This package has also been designed to meet automotive qualification standard Q101.
IRLBA3803 Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 179 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 126 | A |
| IDM | Pulsed Drain Current | 720 | A |
| PD @TC = 25°C | Power Dissipation | 270 | W |
| Linear Derating Factor | 1.8 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 610 | mJ |
| IAR | Avalanche Current | 71 | A |
| EAR | Repetitive Avalanche Energy | 27 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Recommended clip force | 20 | N |
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