MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+
IRLBL1304, IRLC024, IRLC034 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-220
D/C: 06+
Description: MOSFET N-CH 40V 185A SUPER D2PAK
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Datasheet: IRLBL1304
File Size: 179523 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLBL1304 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 185A |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 110A, 10V |
| Input Capacitance (Ciss) @ Vds | 7660pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 140nC @ 4.5V |
| Package / Case | Super D2-Pak |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRLBL1304 IRLBL1304 |
The HEXFET® MOSFET is the most popular power MOSFET in the world. This particular HEXFET® MOSFET is in the SuperD2PakTM and has the same outline and pinout as the standard D2Pak but has increased current handling capability and >1mm lower profile. This makes it ideal to reduce component count in multiparallel D2Pak operation, reduce system power dissipation or upgrade existing design.
This package has also been designed to meet automotive qualification standard Q101 and can be used with normal surface mouting equipment and has the same temperature profile and recommendations as the commonly used D2Pak.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 185, pkg limited to 95A* | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 130, pkg limited to 95A* | A |
| IDM | Pulsed Drain Current | 740 | A |
| PD @TC = 25°C | Power Dissipation | 300 | W |
| Linear Derating Factor | 2.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 1160 | mJ |
| IAR | Avalanche Current | 100 | A |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 260 (1.6mm from case) |
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