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IRLI3215PBF, IRLI3303, IRLI3615

Table of contents:
Info of IRLI3215PBF
Info of IRLI3303
Info of IRLI3615

IRLI3215PBF, IRLI3303, IRLI3615 Selling Leads, Datasheet

MFG:IR Package Cooled:TO-220 FullPak (Iso) D/C:08+/09+

IRLI3215PBF, IRLI3303, IRLI3615 Datasheet download

Five Points

Part Number: IRLI3215PBF

MFG: IR

Package Cooled: TO-220 FullPak (Iso)

D/C: 08+/09+

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IRLI3303 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing

IRLI3303 Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C= 25°C	Continuous Drain Current, V_GS @10V	25
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @10V	18	A
IDM	Pulsed Drain Current	140
P_D @T_C = 25°C	Power Dissipation	31
	Linear Derating Factor	0.21	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
E_AS	Single Pulse Avalanche Energy	130	mJ
I_AR	Avalanche Current	20	A
E_AR	Repetitive Avalanche Energy	5.6	mJ
dv/dt	Peak Diode Recovery dv/dt	2.6	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

IRLI3615 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

IRLI3615 Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, VGS @ 10V	14	A
I_D @ T_C = 100°C	Continuous Drain Current, VGS @ 10V	9.8
I_DM	Pulsed Drain Current	56
P_D @T_C = 25°C	Power Dissipation	45	W
	Linear Derating Factor	0.30	W/°C
V_GS	Gate-to-Source Voltage	±16	V
E_AS	Single Pulse Avalanche Energy	340	mJ
I_AR	Avalanche Current	8.4	A
E_AR	Repetitive Avalanche Energy	4.5	mJ
d_v/d_t	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	oC
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	oC
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

IRLI3615 Features

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
·175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated

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