IRLI620A, IRLI620G, IRLI630 Selling Leads, Datasheet
Package Cooled:TO-262 D/C:TO-
IRLI620A, IRLI620G, IRLI630 Datasheet download

Part Number: IRLI620A
MFG: --
Package Cooled: TO-262
D/C: TO-
Package Cooled:TO-262 D/C:TO-
IRLI620A, IRLI620G, IRLI630 Datasheet download

MFG: --
Package Cooled: TO-262
D/C: TO-
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Datasheet: IRLI620A
File Size: 228098 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: IRLI620G
File Size: 347938 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRLI630
File Size: 230425 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
200 |
V |
|
ID |
Continuous Drain Current (TC=25°C) |
3.3 |
A |
| Continuous Drain Current (TC=100°C) |
2.1 | ||
|
IDM |
Drain Current-Pulsed (1) |
12 |
A |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (2) |
29 |
mJ |
|
IAR |
Avalanche Current (1) |
3.3 |
A |
|
EAR |
Repetitive Avalanche Energy (1) |
3.3 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (3) |
5 |
V/ns |
|
PD |
Total Power Dissipation (TA=25°C)* |
3.1 |
W |
| Total Power Dissipation (TC=25°C) Linear Derating Factor |
33 0.26 |
W W/°C | |
|
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 4.0 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 2.6 | |
| IDM | Pulsed Drain Current | 16 | |
| PD @TC = 25°C | C Power Dissipation | 30 | W |
| Linear Derating Factor | 0.24 | W/°C | |
| VGS | Gate-to-Source Voltage | ±10 | V |
| EAS | Single Pulse Avalanche Energy | 62 | mJ |
| IAR | Avalanche Current | 4.0 | A |
| EAR | Repetitive Avalanche Energy | 3.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and TSTG Storage Temperature Range |
-55 to + 150 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
