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IRLIB4343PBF, IRLIB9343, IRLIB9343PBF

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Info of IRLIB4343PBF
Info of IRLIB9343
Info of IRLIB9343PBF

IRLIB4343PBF, IRLIB9343, IRLIB9343PBF Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:5,000 D/C:0

IRLIB4343PBF, IRLIB9343, IRLIB9343PBF Datasheet download

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Part Number: IRLIB4343PBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: 5,000

D/C: 0

Description: MOSFET P-CH 55V 14A TO220FP

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IRLIB4343PBF Parameters

Technical/Catalog Information	IRLIB4343PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds	740pF @ 50V
Power - Max	39W
Packaging	Tube
Gate Charge (Qg) @ Vgs	42nC @ 10V
Package / Case	TO-220-3 Fullpak (Straight Leads)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLIB4343PBF IRLIB4343PBF

IRLIB4343PBF General Description

This Digital Audio HEXFET^® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

IRLIB4343PBF Maximum Ratings

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	55	V
V_GS	Gate-to-Source Voltage	±20	V
I_D@ T_C= 25	Continuous Drain Current, V_GS @ 10V	19	A
I_D@ T_C= 100	Continuous Drain Current, V_GS @ 10V	13
I_DM	Pulsed Drain Current1	80
P_D@T_C = 25	Power Dissipation	39	W
P_D @T_C = 100	Power Dissipation	20	W
	Linear Derating Factor	0.26	W/
T_J	Operating Junction and	-40 to + 175
T_STG	Storage Temperature Range	-40 to + 175
	Mounting torque, 6-32 or M3 screw	10lb`in (1.1N`m)

IRLIB4343PBF Features

Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175 Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Lead-Free

IRLIB9343 General Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

IRLIB9343 Maximum Ratings

	Parameter	Max.	Units
V_DS	Drain-to-Source Voltage	-55	V
V_GS	Gate-to-Source Voltage	±20	V
I_D @T_C = 25°C	Continuous Drain Current, V_GS@ -10V	-14	A
I_D @T_C = 100°C	Continuous Drain Current, V_GS@ -10V	-10
I_DM	Pulsed Collector Current	-60
P_D @T_C = 25°C	Power Dissipation	33	W
P_D @T_C =100°C	Power Dissipation	20	W
	Linear Derating Factor	0.26	°C
T_JT_STG	Operating Junction and Storage Temperature Range	-40 to + 175	°C
	Mounting Torque, 6-32 or M3 Screw	10 lbf•in (1.1 N•m)

IRLIB9343 Features

· Advanced Process Technology
· Key Parameters Optimized for Class-D Audio Amplifier Applications
· Low RDSON for Improved Efficiency
· Low Qg and Qsw for Better THD and Improved Efficiency
· Low Qrr for Better THD and Lower EMI
· 175°C Operating Junction Temperature for Ruggedness
· Repetitive Avalanche Capability for Robustness and Reliability

IRLIB9343PBF Parameters

Technical/Catalog Information	IRLIB9343PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	105 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds	660pF @ 50V
Power - Max	33W
Packaging	Tube
Gate Charge (Qg) @ Vgs	47nC @ 10V
Package / Case	TO-220-3 Fullpak (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLIB9343PBF IRLIB9343PBF

IRLIB9343PBF General Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175 operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

IRLIB9343PBF Maximum Ratings

Symbol	Parameter	Max.	Units
V_DS	Drain-Source Voltage	-55	V
V_GS	Gate-to-Source Voltage	±20	V
I_D @ T_C = 25	Continuous Drain Current, V_GS @ 10V	-14	A
I_D @T_C= 100	Continuous Drain Current, V_GS @ 10V	-10
I_DM	Pulsed Drain Current1	-60
P_D @T_C = 25	Power Dissipation	33	W
P_D@T_C = 100	Power Dissipation	20	W
	Linear Derating Factor	0.26	W/
T_J	Operating Junction and	-40 to + 175
T_STG	Storage Temperature Range	-40 to + 175
	Mounting torque, 6-32 or M3 screw	10 (1.1)	10lb`in (1.1N`m)

IRLIB9343PBF Features

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