MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:SOT223 D/C:05+
IRLL014N, IRLL014NPBF, IRLL014NTR Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: SOT223
D/C: 05+
Description: MOSFET N-CH 55V 2A SOT223
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PDF/DataSheet Download
Datasheet: IRLL014N
File Size: 162304 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLL014N |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 230pF @ 25V |
| Power - Max | 2.1W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRLL014N IRLL014N |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
| Parameter |
Max. |
Units | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V** |
2.8 |
A |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V* |
2.0 | |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V* |
1.6 | |
| IDM | Pulsed Drain Current |
16 | |
| PD @TA = 25°C | Power Dissipation (PCB Mount)** |
2.1 |
W |
| PD @TA = 25°C | Power Dissipation (PCB Mount)* |
1.0 |
W |
| Linear Derating Factor (PCB Mount)* |
8.3 |
mW/ | |
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS | Single Pulse Avalanche Energy |
32 |
mJ |
| IAR | Avalanche Current |
2.0 |
A |
| EAR | Repetitive Avalanche Energy* |
0.1 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
7.2 |
V/ns |
| TJ, TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
| Technical/Catalog Information | IRLL014NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 230pF @ 25V |
| Power - Max | 2.1W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLL014NPBF IRLL014NPBF |
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