IRLL014TRPBF, IRLL024, IRLL024N Selling Leads, Datasheet
MFG:IR Package Cooled:DPAK D/C:0504+
IRLL014TRPBF, IRLL024, IRLL024N Datasheet download
Part Number: IRLL014TRPBF
MFG: IR
Package Cooled: DPAK
D/C: 0504+
IRLL014TRPBF, IRLL024, IRLL024N
- Table of contents:
Info of IRLL014TRPBF
Info of IRLL024
Info of IRLL024N
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About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRLL024N
PDF/DataSheet Download
Datasheet: IRLL024N
File Size: 117255 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRLL024N
PDF/DataSheet Download
Datasheet: IRLL024N
File Size: 117255 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRLL024N General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application
IRLL024N Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V** | 4.4 | A |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V* | 3.1 | |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V* | 2.5 | |
| IDM | Pulsed Drain Current | 12 | |
| PD @TA = 25°C | Power Dissipation(PCB Mount)** | 2.1 | W |
| PD @TA = 25°C | Power Dissipation(PCB Mount)* | 1.0 | W |
| Linear Derating Factor(PCB Mount)* | 8.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 120 | mJ |
| IAR | Avalanche Current | 3.1 | A |
| EAR | Repetitive Avalanche Energy* | 0.1 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG | Junction and Storage Temperature Range | -55 to + 175 | °C |
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