MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:SOT-223 D/C:07+
IRLL024ZPBF, IRLL024ZTR, IRLL024ZTRPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: SOT-223
D/C: 07+
Description: MOSFET N-CH 55V 5A SOT223
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLL024ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 3A, 10V |
| Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
| Power - Max | 1W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 11nC @ 5V |
| Package / Case | SOT-223 (3 leads + Tab), SC-73, TO-261AA |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLL024ZPBF IRLL024ZPBF |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 5.0 | A |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V | 4.0 | |
| IDM | Pulsed Drain Current | 40 | |
| PD @TA = 25°C | Power Dissipation | 2.8 | W |
| PD @TA = 25°C | Power Dissipation | 1.0 | W |
| Linear Derating Factor | 0.02 | mW/ | |
| VGS | Gate-to-Source Voltage | ± 16 | V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy | 21 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 38 | mJ |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
| Technical/Catalog Information | IRLL024ZTRPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 3A, 10V |
| Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 11nC @ 5V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLL024ZTRPBF IRLL024ZTRPBF |
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