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IRLML6401PBF, IRLML6401TR(F5K9T), IRLML6401TR/1F1A

Table of contents:
Info of IRLML6401PBF
Info of IRLML6401TR(F5K9T)
Info of IRLML6401TR/1F1A

IRLML6401PBF, IRLML6401TR(F5K9T), IRLML6401TR/1F1A Selling Leads, Datasheet

MFG:IR Package Cooled:SOT23 D/C:N/A

IRLML6401PBF, IRLML6401TR(F5K9T), IRLML6401TR/1F1A Picture

IRLML6401PBF, IRLML6401TR(F5K9T), IRLML6401TR/1F1A Datasheet download

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Part Number: IRLML6401PBF

MFG: IR

Package Cooled: SOT23

D/C: N/A

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IRLML6401PBF General Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET^®power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

IRLML6401PBF Maximum Ratings

Symbol	Parameter	Max.	Units
V_DS	Drain-Source Voltage	-12	V
I_D @ T_A = 25	Continuous Drain Current,V_GS @ 10V	-4.3	A
I_D @ T_A = 70	Continuous Drain Current,V_GS@ 10V	-3.4
I_DM	Pulsed Drain Current	-34
P_D @T_A= 25	Power Dissipation	1.3	W
P_D @T_A = 70	Power Dissipation	0.8	W
	Linear Derating Factor	0.01	W/
E_AS	Single Pulse Avalanche Energy	33	mJ
V_GS	Gate-to-Source Voltage	±8.0	V
T_J, T_STG	Junction and Storage Temperature Range	-55 TO +150

IRLML6401PBF Connection Diagram

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