MFG:International Rectifier (VA) Category:Discrete Semiconductor Products Package Cooled:SOT-163 D/C:05+
IRLMS1503TR, IRLMS1503TRPBF, IRLMS1902 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier (VA)
Package Cooled: SOT-163
D/C: 05+
Description: MOSFET N-CH 30V 3.2A 6-TSOP
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLMS1902
File Size: 192129 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLMS1503TR |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.2A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 210pF @ 25V |
| Power - Max | 1.7W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 9.6nC @ 10V |
| Package / Case | Micro6?(TSOP-6) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRLMS1503TR IRLMS1503TR |
| Technical/Catalog Information | IRLMS1503TRPBF |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.2A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 210pF @ 25V |
| Power - Max | 1.7W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 9.6nC @ 10V |
| Package / Case | Micro6?(TSOP-6) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLMS1503TRPBF IRLMS1503TRPBF IRLMS1503PBFDKR ND IRLMS1503PBFDKRND IRLMS1503PBFDKR |
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
| Parameter | Max. | Units | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @4.5V | 3.2 | A |
| ID @ TA = 70°C | Continuous Drain Current, VGS @4.5V | 2.6 | |
| IDM | Pulsed Drain Current | 18 | |
| PD @TA = 25°C | Power Dissipation | 1.7 | W |
| Linear Derating Factor | 13 | W/°C | |
| VGS | Gate-to-Source Voltage | ±8.0 | V |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
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