MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:SOT23-6 D/C:07+
IRLMS6702TRPBF, IRLMS6802, IRLMS6802TR Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: SOT23-6
D/C: 07+
Description: MOSFET P-CH 20V 5.6A 6-TSOP
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLMS6802
File Size: 95946 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLMS6702TRPBF |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.4A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.6A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 210pF @ 15V |
| Power - Max | 1.7W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V |
| Package / Case | Micro6?(TSOP-6) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLMS6702TRPBF IRLMS6702TRPBF IRLMS6702PBFDKR ND IRLMS6702PBFDKRND IRLMS6702PBFDKR |
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The Micro6 package with its customized leadframeproduces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
| Parameter | Max. | Units | |
| VDS | Drain- Source Voltage | -20 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V 4.5V | -5.6 | A |
| ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V 4.5V | -4.5 | |
| IDM | Pulsed Drain Current | -45 | |
| PD @TA = 25°C | Power Dissipation | 2.0 | W |
| PD @TA = 25°C | Power Dissipation | 1.3 | |
| Linear Derating Factor | 0.016 | W/°C | |
| EAS | Single Pulse Avalanche Energy | 31 | mJ |
| VGS | Gate-to-Source Voltage | ±12 | V |
| TJ TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
| Technical/Catalog Information | IRLMS6802TR |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5.6A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5.1A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1079pF @ 10V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 16nC @ 5V |
| Package / Case | Micro3?(SOT-23-3, TO-236AB) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRLMS6802TR IRLMS6802TR |
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