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IRLR024N, IRLR024NPBF, IRLR024NTR

IRLR024N, IRLR024NPBF, IRLR024NTR Selling Leads, Datasheet

MFG:International Rectifier  Category:Discrete Semiconductor Products  Package Cooled:TO-252  D/C:07+

IRLR024N Picture

IRLR024N, IRLR024NPBF, IRLR024NTR Datasheet download

Five Points

Part Number: IRLR024N

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-252

D/C: 07+

Description: MOSFET N-CH 55V 17A DPAK

Price Break

450

Unit Price

.91938

Extended Price

413.72

(All prices are in USD) Prices for reference only
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IRLR024N Suppliers

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  • IRLR024N

  • Vendor: IR Pack: TO Qty: 5000  Adddate: 2026-07-17
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  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • IRLR024N

  • Vendor: IR Pack: TO D/C: 09+& Qty: 37500  Adddate: 2026-07-17
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  • ao chuang electronic   China
    Contact: Mr.Ms,Zhao   MSN:aochuang.dz@msn.cn
    Tel: 86-755-83281916
    Fax: 86-755-83281916
    (26)
  • IRLR024N

  • Vendor: IR Pack: TO D/C: 09+& Qty: 3871  Adddate: 2026-07-17
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  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IRLR024N

PDF/DataSheet Download

Datasheet: IRLR024N

File Size: 166099 KB

Manufacturer: IRF [International Rectifier]

Download : Click here to Download

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IRLR024NPBF Suppliers

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  • IRL1004

  • Vendor: IR Pack: TO D/C: 09+& Qty: 220  Adddate: 2026-07-17
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  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IRLR024NPBF

PDF/DataSheet Download

Datasheet: IRLR024NPBF

File Size: 312136 KB

Manufacturer: IRF [International Rectifier]

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IRLR024NTR Suppliers

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  • IRLR024NTR

  • Vendor: IR Pack: TO D/C: 04+& Qty: 1161 Note: new &original?  Adddate: 2026-07-17
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  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • IRLR024NTRPBF

  • Vendor: IR Pack: TO D/C: 09+& Qty: 5000 Note: Original and stock on hand  Adddate: 2026-07-17
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  • S&L Electronics(HK)ltd   China
    Contact: Ms.Ivy   MSN:ivylan1999@hotmail.com
    Tel: 0086-0755-25466095
    Fax: 0086-0755-25469551
    (10)
  • IRLR024NTRPBF

  • Vendor: IR Qty: 12000 Note: 0  Adddate: 2026-07-17
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  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)
  • IRLR024NTRPBF

  • Vendor: IR D/C: 07+& Qty: 28000 Note: original stk  Adddate: 2026-07-17
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  • Skyeast Intl. Ltd.   China
    Contact: Mr.RichardLiu  
    Tel: 86--755-83276226
    Fax: 86--755--83215205
    (0)

About IRL1004

PDF/DataSheet Download

Datasheet: IRL1004

File Size: 91524 KB

Manufacturer: IRF [International Rectifier]

Download : Click here to Download

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IRLR024N Parameters

Technical/Catalog InformationIRLR024N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs65 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 25V
Power - Max45W
PackagingBulk
Gate Charge (Qg) @ Vgs15nC @ 5V
Package / CaseDPak,SC-63,TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRLR024N
IRLR024N

IRLR024N General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRLR024N Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 72
PD @TC = 25°C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 68 mJ
IAR Avalanche Current 11 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRLR024NPBF Parameters

Technical/Catalog InformationIRLR024NPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs65 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLR024NPBF
IRLR024NPBF

IRLR024NPBF General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRLR024NPBF Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 72
PD @TC = 25°C C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 68 mJ
IAR Avalanche Current 11 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRLR024NTR Parameters

Technical/Catalog InformationIRLR024NTR
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs65 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 25V
Power - Max45W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15nC @ 5V
Package / CaseDPak,SC-63,TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRLR024NTR
IRLR024NTR

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