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This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
IRLR9343PBF Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
-55
V
VGS
Gate-to-Source Voltage
± 20
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-20
A
ID @ TC =100°C
Continuous Drain Current, VGS @ 10V
-14
A
IDM
Pulsed Drain Current
-60
A
PD @ TC = 25
Maximum Power Dissipation
79
W
PD @ TC =100°C
Maximum Power Dissipation
39
W
Linear Derating Factor
0.53
W
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
Clamping Pressure
-
N
IRLR9343PBF Features
· Advanced Process Technology ·Key Parameters Optimized for Class-D Audio Amplifier Applications · Low RDSON for Improved Efficiency · Low Qg and Qsw for Better THD and Improved Efficiency · Low Qrr for Better THD and Lower EMI · 175°C Operating Junction Temperature for Ruggedness · Repetitive Avalanche Capability for Robustness and Reliability · Multiple Package Options · Lead-Free