MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:D-pak D/C:06+
IRLR9343PBF, IRLR9343TRL, IRLR9343TRLPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: D-pak
D/C: 06+
Description: MOSFET P-CH 55V 20A DPAK
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLR9343PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 3.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 50V |
| Power - Max | 79W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 47nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLR9343PBF IRLR9343PBF |
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
| Symbol | Parameter | Max. | Units |
| VDS | Drain-to-Source Voltage | -55 | V |
| VGS | Gate-to-Source Voltage | ± 20 | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | -20 | A |
| ID @ TC =100°C | Continuous Drain Current, VGS @ 10V | -14 | A |
| IDM | Pulsed Drain Current | -60 | A |
| PD @ TC = 25 | Maximum Power Dissipation | 79 | W |
| PD @ TC =100°C | Maximum Power Dissipation | 39 | W |
| Linear Derating Factor |
0.53 |
W | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Clamping Pressure | - | N |
| Technical/Catalog Information | IRLR9343TRLPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 3.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 50V |
| Power - Max | 79W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 47nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLR9343TRLPBF IRLR9343TRLPBF |
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